Magnetoresistance in a nominally undoped ingan thin film
文献类型:期刊论文
作者 | Ding, K.1,2; Zeng, Y. P.1,2,3; Li, Y. Y.2; Cui, L. J.2; Wang, J. X.3; Lu, H. X.3; Cong, P. P.3 |
刊名 | Applied physics a-materials science & processing
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出版日期 | 2010-04-01 |
卷号 | 99期号:1页码:63-66 |
ISSN号 | 0947-8396 |
DOI | 10.1007/s00339-009-5497-3 |
通讯作者 | Ding, k.(dingkai@red.semi.ac.cn) |
英文摘要 | The magnetotransport properties of a nominally undoped ingan thin film grown by metal-organic chemical vapor deposition were investigated. resistivity was measured under a magnetic field up to 5 t over the temperature range of 3 to 298 k. the film exhibits a negative magnetoresistance at low temperatures. its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 k. the negative component was described by a model proposed by khosla and fischer for spin scattering of carriers in an impurity band. the positive part was attributed to the effect of lorentz force on the carrier motion. agreement between the model and the data is presented. |
WOS关键词 | NEGATIVE MAGNETORESISTANCE ; DIODES |
WOS研究方向 | Materials Science ; Physics |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
语种 | 英语 |
WOS记录号 | WOS:000276069900009 |
出版者 | SPRINGER |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427863 |
专题 | 半导体研究所 |
通讯作者 | Ding, K. |
作者单位 | 1.Chinese Acad Sci, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Novel Mat Ctr, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Ding, K.,Zeng, Y. P.,Li, Y. Y.,et al. Magnetoresistance in a nominally undoped ingan thin film[J]. Applied physics a-materials science & processing,2010,99(1):63-66. |
APA | Ding, K..,Zeng, Y. P..,Li, Y. Y..,Cui, L. J..,Wang, J. X..,...&Cong, P. P..(2010).Magnetoresistance in a nominally undoped ingan thin film.Applied physics a-materials science & processing,99(1),63-66. |
MLA | Ding, K.,et al."Magnetoresistance in a nominally undoped ingan thin film".Applied physics a-materials science & processing 99.1(2010):63-66. |
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来源:半导体研究所
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