Optical properties of mn+ doped gaas
文献类型：期刊论文
| 作者 | Zhou, Huiying1,2,3; Qu, Shengchun2; Liao, Shuzhi3; Zhang, Fasheng1; Liu, Junpeng2; Wang, Zhanguo2 |
| 刊名 | Optoelectronics and advanced materials-rapid communications
 |
| 出版日期 | 2010-06-01 |
| 卷号 | 4期号:6页码:784-787 |
| 关键词 | Photoluminescence Ion implantation Manganese Gaas |
| ISSN号 | 1842-6573 |
| 通讯作者 | Zhou, huiying(zhouhy@semi.ac.cn) |
| 英文摘要 | Photoluminescence is one of the most useful techniques to obtain information about optoelectronic properties and defect structures of materials. in this work, mn-doped gaas structure materials were prepared by mn+ ion implantation at room temperature into gaas. the implanted samples were subsequently annealed at various temperatures under n-2 atmosphere to recrystallize the samples and remove implant damage. the room temperature and low temperature photoluminescence of mn-doped gaas were investigated, respectively. a strong peak was found for the sample annealed at 950 degrees c for 5 s. transitions near 0.989 ev (1254 nm), 1.155 ev (1074 nm) and 1.329 ev (933nm) were identified and formation of these emissions was analyzed for all prepared samples. this structure material could have myriad applications, including information storage, magneto-optical properties and energy level engineering. |
| WOS关键词 | ION-IMPLANTATION ; SEMICONDUCTORS ; CENTERS ; DOTS |
| WOS研究方向 | Materials Science ; Optics |
| WOS类目 | Materials Science, Multidisciplinary ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000279667300004 |
| 出版者 | NATL INST OPTOELECTRONICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2427962 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, Huiying |
| 作者单位 | 1.Cent S Univ Forestry & Technol, Comp & Informat Engn Sch, Changsha 410004, Hunan, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hunan Normal Univ, Dept Phys, Minist Educ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Huiying,Qu, Shengchun,Liao, Shuzhi,et al. Optical properties of mn+ doped gaas[J]. Optoelectronics and advanced materials-rapid communications,2010,4(6):784-787. |
| APA | Zhou, Huiying,Qu, Shengchun,Liao, Shuzhi,Zhang, Fasheng,Liu, Junpeng,&Wang, Zhanguo.(2010).Optical properties of mn+ doped gaas.Optoelectronics and advanced materials-rapid communications,4(6),784-787. |
| MLA | Zhou, Huiying,et al."Optical properties of mn+ doped gaas".Optoelectronics and advanced materials-rapid communications 4.6(2010):784-787. |
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来源：半导体研究所
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