Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers
文献类型：期刊论文
| 作者 | Tang Hai-Ma1; Zheng Zhong-Shan1; Zhang En-Xia2; Yu Fang3; Li Ning3; Wang Ning-Juan3 |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2010-10-01 |
| 卷号 | 19期号:10页码:6 |
| 关键词 | Silicon-on-insulator wafers Radiation hardness Nitrogen implantation |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/19/10/106106 |
| 通讯作者 | Zheng zhong-shan(zszheng513@163.com) |
| 英文摘要 | In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees c. the effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. the results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. the nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. in particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. after 300-krad(si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. in addition, the wafers were analysed by the fourier transform infrared spectroscopy technique, and some useful results have been obtained. |
| WOS关键词 | ION-IMPLANTATION ; IMPROVEMENT ; OXYGEN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000282923600059 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428026 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng Zhong-Shan |
| 作者单位 | 1.Univ Jinan, Dept Phys, Jinan 250022, Peoples R China 2.Shanghai Univ Engn & Sci, Coll Mat Engn, Shanghai 201620, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang Hai-Ma,Zheng Zhong-Shan,Zhang En-Xia,et al. Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers[J]. Chinese physics b,2010,19(10):6. |
| APA | Tang Hai-Ma,Zheng Zhong-Shan,Zhang En-Xia,Yu Fang,Li Ning,&Wang Ning-Juan.(2010).Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers.Chinese physics b,19(10),6. |
| MLA | Tang Hai-Ma,et al."Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers".Chinese physics b 19.10(2010):6. |
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来源：半导体研究所
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