Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhou, Zhiwen1; He, Jingkai1; Wang, Ruichun1; Li, Cheng2; Yu, Jinzhong3 |
| 刊名 | Optics communications
 |
| 出版日期 | 2010-09-15 |
| 卷号 | 283期号:18页码:3404-3407 |
| 关键词 | Germanium Hererojunction Photodiode Tensile strain |
| ISSN号 | 0030-4018 |
| DOI | 10.1016/j.optcom.2010.04.098 |
| 通讯作者 | Zhou, zhiwen(zhouzw@sziit.com.cn) |
| 英文摘要 | We report on normal incidence p-i-n heterojunction photodiodes operating in the near-infrared region and realized in pure germanium on planar silicon substrate. the diodes were fabricated by ultrahigh vacuum chemical vapor deposition at 600 degrees c without thermal annealing and allowing the integration with standard silicon processes. due to the 0.14% residual tensile strain generated by the thermal expansion mismatch between ge and si, an efficiency enhancement of nearly 3-fold at 1.55 mu m and the absorption edge shifting to longer wavelength of about 40 nm are achieved in the epitaxial ge films. the diode with a responsivity of 0.23 a/w at 1.55 mu m wavelength and a bulk dark current density of 10 ma/cm(2) is demonstrated. these diodes with high performances and full compatibility with the cmos processes enable monolithically integrating microphotonics and microelectronics on the same chip. (c) 2010 elsevier b.v. all rights reserved. |
| WOS关键词 | SI(100) |
| WOS研究方向 | Optics |
| WOS类目 | Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000280051300007 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428080 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhou, Zhiwen |
| 作者单位 | 1.Shenzhen Inst Informat & Technol, Dept Elect Commun Technol, Shenzhen 518029, Guangdong, Peoples R China 2.Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, Xiamen 361005, Fujian, Peoples R China 3.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhou, Zhiwen,He, Jingkai,Wang, Ruichun,et al. Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition[J]. Optics communications,2010,283(18):3404-3407. |
| APA | Zhou, Zhiwen,He, Jingkai,Wang, Ruichun,Li, Cheng,&Yu, Jinzhong.(2010).Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition.Optics communications,283(18),3404-3407. |
| MLA | Zhou, Zhiwen,et al."Normal incidence p-i-n ge heterojunction photodiodes on si substrate grown by ultrahigh vacuum chemical vapor deposition".Optics communications 283.18(2010):3404-3407. |
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来源：半导体研究所
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