Vls growth of siox nanowires with a stepwise nonuniformity in diameter
文献类型：期刊论文
| 作者 | Huang, Shengli1,2; Wu, Yan1,2,3; Zhu, Xianfang1,2,4,5; Li, Lunxiong1,2; Wang, Zhanguo4; Wang, Lianzhou1,2,5; Lu, Gaoqing1,2,5 |
| 刊名 | Journal of applied physics
 |
| 出版日期 | 2011-04-15 |
| 卷号 | 109期号:8页码:5 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3574398 |
| 通讯作者 | Zhu, xianfang(zhux@xmu.edu.cn) |
| 英文摘要 | With a precise control of temperature, gas flow, and pressure and with sequentially increased durations for reactions, the detailed processes of catalyzing, nucleation, and growth of the siox nanowires were successfully traced. especially a stepwise nonuniformity in diameter of nanowire during the growth was for the first time detected. with analysis of these detailed processes via nanocurvature and nano ripening effects, a further understanding of the vapor-liquid-solid mechanism was achieved and a novel mechanism for formation of the stepwise nonuniformity in diameter of nanowire was particularly proposed. all these will be the crucial basis for the further, accurately controlled growth of siox nanowires and the relevant applications. (c) 2011 american institute of physics. [doi:10.1063/1.3574398] |
| WOS关键词 | SILICON NANOWIRES ; SURFACE MIGRATION ; NANOSTRUCTURES ; CATALYST |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000290047000179 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428159 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhu, Xianfang |
| 作者单位 | 1.Xiamen Univ, China Australia Joint Lab Funct Nanomat, Xiamen 361005, Peoples R China 2.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 3.Jimei Univ, Dept Phys, Xiamen 361021, Peoples R China 4.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 5.Univ Queensland, ARC Ctr Excellence Funct Nanomat, Brisbane, Qld 4072, Australia |
| 推荐引用方式 GB/T 7714 | Huang, Shengli,Wu, Yan,Zhu, Xianfang,et al. Vls growth of siox nanowires with a stepwise nonuniformity in diameter[J]. Journal of applied physics,2011,109(8):5. |
| APA | Huang, Shengli.,Wu, Yan.,Zhu, Xianfang.,Li, Lunxiong.,Wang, Zhanguo.,...&Lu, Gaoqing.(2011).Vls growth of siox nanowires with a stepwise nonuniformity in diameter.Journal of applied physics,109(8),5. |
| MLA | Huang, Shengli,et al."Vls growth of siox nanowires with a stepwise nonuniformity in diameter".Journal of applied physics 109.8(2011):5. |
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来源：半导体研究所
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