中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structures and optical characteristics of ingan quantum dots grown by mbe

文献类型:期刊论文

作者Wang Baozhu1,2; Yan Cuiying; Wang Xiaoliang2
刊名Rare metal materials and engineering
出版日期2011-11-01
卷号40期号:11页码:2030-2032
关键词Ingan Quantum dot Mbe
ISSN号1002-185X
通讯作者Wang baozhu(wangbz@semi.ac.cn)
英文摘要Ingan quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). the effects of inn nuclear layer on the structural and optical characteristics of ingan quantum dots were studied. in-situ reflection high energy electron diffraction (rheed) was used to analyze the growth of the ingan dots structures. atomic force microscope (afm) and photoluminescence (pl) were used to characterize the structure and optical properties of the ingan quantum dots. the results show that the ingan quantum dots grown on the inn nuclear layer can get higher density and better quality compared with that grown directly on gan layer. the sizes of ingan quantum dots grown on the inn nuclear layer are more uniform, about 35-45 nm and the density can reach 3.2 x 10(10)/cm(2). the pl intensity of the ingan quantum dots grown on the inn nuclear layer is twice as high as that of the ingan quantum dots grown directly on gan layer. the fwhm of the quantum dots pl peak is about 10 nm.
WOS关键词EPITAXY ; MOCVD
WOS研究方向Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种英语
WOS记录号WOS:000303782000033
出版者NORTHWEST INST NONFERROUS METAL RESEARCH
URI标识http://www.irgrid.ac.cn/handle/1471x/2428174
专题半导体研究所
通讯作者Wang Baozhu
作者单位1.Hebei Univ Sci & Technol, Inst Informat Sci & Engn, Shijiazhuang 050018, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Wang Baozhu,Yan Cuiying,Wang Xiaoliang. Structures and optical characteristics of ingan quantum dots grown by mbe[J]. Rare metal materials and engineering,2011,40(11):2030-2032.
APA Wang Baozhu,Yan Cuiying,&Wang Xiaoliang.(2011).Structures and optical characteristics of ingan quantum dots grown by mbe.Rare metal materials and engineering,40(11),2030-2032.
MLA Wang Baozhu,et al."Structures and optical characteristics of ingan quantum dots grown by mbe".Rare metal materials and engineering 40.11(2011):2030-2032.

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来源:半导体研究所

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