Structures and optical characteristics of ingan quantum dots grown by mbe
文献类型:期刊论文
作者 | Wang Baozhu1,2; Yan Cuiying; Wang Xiaoliang2 |
刊名 | Rare metal materials and engineering
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出版日期 | 2011-11-01 |
卷号 | 40期号:11页码:2030-2032 |
关键词 | Ingan Quantum dot Mbe |
ISSN号 | 1002-185X |
通讯作者 | Wang baozhu(wangbz@semi.ac.cn) |
英文摘要 | Ingan quantum dots were grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (rf-mbe). the effects of inn nuclear layer on the structural and optical characteristics of ingan quantum dots were studied. in-situ reflection high energy electron diffraction (rheed) was used to analyze the growth of the ingan dots structures. atomic force microscope (afm) and photoluminescence (pl) were used to characterize the structure and optical properties of the ingan quantum dots. the results show that the ingan quantum dots grown on the inn nuclear layer can get higher density and better quality compared with that grown directly on gan layer. the sizes of ingan quantum dots grown on the inn nuclear layer are more uniform, about 35-45 nm and the density can reach 3.2 x 10(10)/cm(2). the pl intensity of the ingan quantum dots grown on the inn nuclear layer is twice as high as that of the ingan quantum dots grown directly on gan layer. the fwhm of the quantum dots pl peak is about 10 nm. |
WOS关键词 | EPITAXY ; MOCVD |
WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
WOS记录号 | WOS:000303782000033 |
出版者 | NORTHWEST INST NONFERROUS METAL RESEARCH |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428174 |
专题 | 半导体研究所 |
通讯作者 | Wang Baozhu |
作者单位 | 1.Hebei Univ Sci & Technol, Inst Informat Sci & Engn, Shijiazhuang 050018, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Wang Baozhu,Yan Cuiying,Wang Xiaoliang. Structures and optical characteristics of ingan quantum dots grown by mbe[J]. Rare metal materials and engineering,2011,40(11):2030-2032. |
APA | Wang Baozhu,Yan Cuiying,&Wang Xiaoliang.(2011).Structures and optical characteristics of ingan quantum dots grown by mbe.Rare metal materials and engineering,40(11),2030-2032. |
MLA | Wang Baozhu,et al."Structures and optical characteristics of ingan quantum dots grown by mbe".Rare metal materials and engineering 40.11(2011):2030-2032. |
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来源:半导体研究所
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