中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature

文献类型:期刊论文

作者Bai An-Qi; Zheng Jun; Tao Ye-Liao; Zuo Yu-Hua; Xue Chun-Lai; Cheng Bu-Wen; Wang Qi-Ming
刊名Chinese physics b
出版日期2011-11-01
卷号20期号:11页码:6
关键词Silicon nanopillar arrays Porous anodic alumina Nanocrystal Room temperature
ISSN号1674-1056
DOI10.1088/1674-1056/20/11/116103
通讯作者Cheng bu-wen(cbw@semi.ac.cn)
英文摘要Well-aligned and closely-packed silicon nanopillar (snp) arrays are fabricated by using a simple method with magnetron sputtering of si on a porous anodic alumina (paa) template at room temperature. the snps are formed by selective growth on the top of the paa pore walls. the growth mechanism analysis indicates that the structure of the snps can be modulated by the pore spacing of the paa and the sputtering process and is independent of the wall width of the paa. moreover, nanocrystals are identified by using transmission electron microscopy in the as-deposited snp samples, which are related to the heat isolation structure of the snps. the raman focus depth profile reveals a high crystallization ratio on the surface.
WOS关键词SOLAR-CELLS ; SILICON
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000298491700060
出版者IOP PUBLISHING LTD
URI标识http://www.irgrid.ac.cn/handle/1471x/2428186
专题半导体研究所
通讯作者Cheng Bu-Wen
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Bai An-Qi,Zheng Jun,Tao Ye-Liao,et al. Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature[J]. Chinese physics b,2011,20(11):6.
APA Bai An-Qi.,Zheng Jun.,Tao Ye-Liao.,Zuo Yu-Hua.,Xue Chun-Lai.,...&Wang Qi-Ming.(2011).Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature.Chinese physics b,20(11),6.
MLA Bai An-Qi,et al."Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature".Chinese physics b 20.11(2011):6.

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来源:半导体研究所

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