Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point
文献类型：期刊论文
| 作者 | Wang Li-Guo; Shen Chao; Zheng Hou-Zhi; Zhu Hui; Zhao Jian-Hua |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-10-01 |
| 卷号 | 20期号:10页码:8 |
| 关键词 | Charged acceptor centre Screening effect Exchange interaction |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/10/100301 |
| 通讯作者 | Zheng hou-zhi(hzzheng@red.semi.ac.cn) |
| 英文摘要 | This paper describes an n-i-p-i-n model heterostructure with a manganese (mn)-doped p-type base region to check the stability of a positively charged manganese a(mn)(+) centre with two holes weakly bound by a negatively charged 3d(5)(mn) core of a local spin s = 5/2 in the framework of the effective mass approximation near the gamma critical point (k similar to 0). by including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre a(mn)(+) are calculated within a hole concentration range from 1 x 10(16) cm(-3) to 1 x 10(17) cm(-3), which is achievable by biasing the structure under photo-excitation. for comparison, the ground-state energy of a single hole in the neutral a(mn)(0) centre is calculated in the same concentration range. it turns out that the binding energy of the second hole in the a(mn)(+) centre varies from 9.27 mev to 4.57 mev. we propose that the presence of the a(mn)(+) centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the a(mn)(+) centre since a high frequency dielectric constant of epsilon(infinity) = 10.66 can be safely adopted in this case. the novel feature of the ability to tune the impurity level of the a(mn)(+) centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors. |
| WOS关键词 | SHALLOW ACCEPTOR STATES ; GALLIUM-ARSENIDE ; SEMICONDUCTORS ; FIELD |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000295969000003 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428273 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng Hou-Zhi |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Li-Guo,Shen Chao,Zheng Hou-Zhi,et al. Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point[J]. Chinese physics b,2011,20(10):8. |
| APA | Wang Li-Guo,Shen Chao,Zheng Hou-Zhi,Zhu Hui,&Zhao Jian-Hua.(2011).Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point.Chinese physics b,20(10),8. |
| MLA | Wang Li-Guo,et al."Stability of the positively charged manganese centre in gaas heterostructures examined theoretically by the effective mass approximation calculation near the gamma critical point".Chinese physics b 20.10(2011):8. |
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来源：半导体研究所
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