Selenium-doped silicon-on-insulator waveguide photodetector with enhanced sensitivity at 1550 nm
文献类型：期刊论文
| 作者 | Mao, Xue; Han, Peide; Gao, Lipeng; Mi, Yanhong; Hu, Shaoxu; Fan, Yujie; Zhao, Chunhua; Wang, Qiming |
| 刊名 | Ieee photonics technology letters
 |
| 出版日期 | 2011-10-15 |
| 卷号 | 23期号:20页码:3 |
| 关键词 | Deep level, photodetector Responses at subbandgap wavelength Selenium ion implantation Silicon waveguide |
| ISSN号 | 1041-1135 |
| DOI | 10.1109/lpt.2011.2163704 |
| 通讯作者 | Mao, xue(maoxue@semi.ac.cn) |
| 英文摘要 | This letter describes the fabrication and characterization of a silicon-on-insulator all silicon rib waveguide photodetector with sensitivity at 1550 nm. response at the subbandgap wavelength is provided through the introduction of deep levels via se ion implantation. se ions were implanted into the waveguide using an ion beam energy of 240 kev at a dose of 3 x 10(15) cm(-2) the most efficient device has a responsivity of 25 ma/w at 3 v reverse bias. the fabrication is fully compatible with standard complementary metal-oxide-semiconductor processes. |
| WOS关键词 | ION-IMPLANTATION ; POWER MONITOR ; PHOTODIODES |
| WOS研究方向 | Engineering ; Optics ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000298952900019 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428298 |
| 专题 | 半导体研究所 |
| 通讯作者 | Mao, Xue |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Mao, Xue,Han, Peide,Gao, Lipeng,et al. Selenium-doped silicon-on-insulator waveguide photodetector with enhanced sensitivity at 1550 nm[J]. Ieee photonics technology letters,2011,23(20):3. |
| APA | Mao, Xue.,Han, Peide.,Gao, Lipeng.,Mi, Yanhong.,Hu, Shaoxu.,...&Wang, Qiming.(2011).Selenium-doped silicon-on-insulator waveguide photodetector with enhanced sensitivity at 1550 nm.Ieee photonics technology letters,23(20),3. |
| MLA | Mao, Xue,et al."Selenium-doped silicon-on-insulator waveguide photodetector with enhanced sensitivity at 1550 nm".Ieee photonics technology letters 23.20(2011):3. |
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来源：半导体研究所
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