Comparison of as-grown and annealed gan/ingan:mg samples
文献类型：期刊论文
| 作者 | Deng, Qingwen1; Wang, Xiaoliang1,2,3; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Chen, Hong1,2; Lin, Defeng1; Jiang, Lijuan1,2; Feng, Chun1,2; Li, Jinmin1,2,3 |
| 刊名 | Journal of physics d-applied physics
 |
| 出版日期 | 2011-08-31 |
| 卷号 | 44期号:34页码:5 |
| ISSN号 | 0022-3727 |
| DOI | 10.1088/0022-3727/44/34/345101 |
| 通讯作者 | Deng, qingwen(daven@semi.ac.cn) |
| 英文摘要 | Mg-doped ingan was grown on unintentionally doped gan layer, and mg and defect behaviours in both gan and ingan : mg were investigated through photoluminescence measurement at 7k. mg acceptor was found in unintentionally doped gan after thermal annealing in n(2) ambient, and mg activation energy was estimated to be 200 mev and 110 mev for gan and ingan, respectively. particularly, the ultraviolet band (3.0-3.2 ev) in the gan layer was infrequently observed in the unannealed sample but quenched in the annealed sample; this band may be associated with oxygen-substituted nitrogen defects. moreover, the measurement errors of photoluminescence and x-ray diffraction originated from strain were taken into account. |
| WOS关键词 | LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; BAND-GAP ; MG ; PHOTOLUMINESCENCE ; INGAN ; DEPENDENCE ; STRAIN ; ENERGY ; INN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000294761500005 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428334 |
| 专题 | 半导体研究所 |
| 通讯作者 | Deng, Qingwen |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. Comparison of as-grown and annealed gan/ingan:mg samples[J]. Journal of physics d-applied physics,2011,44(34):5. |
| APA | Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).Comparison of as-grown and annealed gan/ingan:mg samples.Journal of physics d-applied physics,44(34),5. |
| MLA | Deng, Qingwen,et al."Comparison of as-grown and annealed gan/ingan:mg samples".Journal of physics d-applied physics 44.34(2011):5. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。