Theoretical study on inxga1-xn/gan quantum dots solar cell
文献类型:期刊论文
作者 | Deng, Qingwen1; Wang, Xiaoliang1,2; Yang, Cuibai1,2; Xiao, Hongling1,2; Wang, Cuimei1,2; Yin, Haibo1,2; Hou, Qifeng1; Li, Jinmin1; Wang, Zhanguo2; Hou, Xun |
刊名 | Physica b-condensed matter
![]() |
出版日期 | 2011 |
卷号 | 406期号:1页码:73-76 |
关键词 | Efficiency Quantum dot Gan |
ISSN号 | 0921-4526 |
DOI | 10.1016/j.physb.2010.10.020 |
通讯作者 | Deng, qingwen(daven@semi.ac.cn) |
英文摘要 | In this work, the structure of inxga1-xn/gan quantum dots solar cell is investigated by solving the schrodinger equation in light of the kronig-penney model. compared to p-n homojunction and heterojunction solar cells, the inxga1-xn/gan quantum clots intermediate band solar cell manifests much larger power conversion efficiency. furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well. (c) 2010 elsevier b.v. all rights reserved. |
WOS关键词 | EFFICIENCY |
WOS研究方向 | Physics |
WOS类目 | Physics, Condensed Matter |
语种 | 英语 |
WOS记录号 | WOS:000285212200016 |
出版者 | ELSEVIER SCIENCE BV |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428339 |
专题 | 半导体研究所 |
通讯作者 | Deng, Qingwen |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Deng, Qingwen,Wang, Xiaoliang,Yang, Cuibai,et al. Theoretical study on inxga1-xn/gan quantum dots solar cell[J]. Physica b-condensed matter,2011,406(1):73-76. |
APA | Deng, Qingwen.,Wang, Xiaoliang.,Yang, Cuibai.,Xiao, Hongling.,Wang, Cuimei.,...&Hou, Xun.(2011).Theoretical study on inxga1-xn/gan quantum dots solar cell.Physica b-condensed matter,406(1),73-76. |
MLA | Deng, Qingwen,et al."Theoretical study on inxga1-xn/gan quantum dots solar cell".Physica b-condensed matter 406.1(2011):73-76. |
入库方式: iSwitch采集
来源:半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。