Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers
文献类型：期刊论文
| 作者 | Tang Hai-Ma1; Zheng Zhong-Shan1; Zhang En-Xia2; Yu Fang3; Li Ning3; Wang Ning-Juan3; Li Guo-Huan3; Ma Hong-Zhi3 |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2011-05-01 |
| 卷号 | 60期号:5页码:6 |
| 关键词 | Separation by oxygen implantation Buried oxide Nitrogen implantation Positive charge density |
| ISSN号 | 1000-3290 |
| 通讯作者 | Zheng zhong-shan(zszheng513@163.com) |
| 英文摘要 | The influence of nitrogen implantation on the properties of silicon-on-insulator buried oxide using separation by oxygen implantation was studied. nitrogen ions were implanted into the buried oxide layer with a high-dose of 10(16) cm(-2). the experimental results showed that the positive charge density of the nitrogen-implanted buried oxide was obviously increased, compared with the control sampes without nitrogen implantation. it was also found that the post-implantation annealing caused an additional increase of the positive charge density in the nitrogen implanted samples. however, annealing time displayed a small effect on the positive charge density of the nitrogen implanted buried oxide, compared with the significant increase induced by nitrogen implantation. moreover, the capacitance-voltage results showed that the positive charge density of the unannealed sample with nitrogen implanted is approximately equal to that of the sample annealed at 1100 degrees c for 2.5 h in n(2) ambient, despite an additional increase brought with annealing, and the buried oxide of the sample after 0.5 h annealing has a maximum value of positive charge density. according to the simulating results, the nitrogen implantation resulted in a heavy damage to the buried oxide, a lot of silicon and oxygen vacancies were introduced in the buried oxide during implantation. however, the fourier transform infrared spectroscopy of the samples indicates that implantation induced defects can be basically eliminated after an annealing at 1100 degrees c for 0.5 h. the increase of the positive charge density of the nitrogen implanted buried oxide is ascribed to the accumulation of implanted nitrogen near the interface of buried oxide and silicon, which caused the break of weak si - si bonds and the production of positive silicon ions in the silicon-rich region of the buried oxide near the interface, and this conclusion is supported by the results of secondary ion mass spectrometry. |
| WOS关键词 | RADIATION HARDNESS ; IMPLANTING NITROGEN ; ION-IMPLANTATION ; IMPROVEMENT ; TECHNOLOGY ; OXYGEN ; LAYER |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000291239700080 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428402 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zheng Zhong-Shan |
| 作者单位 | 1.Univ Jinan, Dept Phys, Jinan 250022, Peoples R China 2.Shanghai Univ Engn Sci, Coll Mat Engn, Shanghai 201620, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Tang Hai-Ma,Zheng Zhong-Shan,Zhang En-Xia,et al. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers[J]. Acta physica sinica,2011,60(5):6. |
| APA | Tang Hai-Ma.,Zheng Zhong-Shan.,Zhang En-Xia.,Yu Fang.,Li Ning.,...&Ma Hong-Zhi.(2011).Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers.Acta physica sinica,60(5),6. |
| MLA | Tang Hai-Ma,et al."Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers".Acta physica sinica 60.5(2011):6. |
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来源：半导体研究所
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