Electronic band structure of a type-ii 'w' quantum well calculated by an eight-band k center dot p model
文献类型：期刊论文
| 作者 | Yu Xiu1; Gu Yong-Xian2; Wang Qing1; Wei Xin1; Chen Liang-Hui1 |
| 刊名 | Chinese physics b
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 20期号:3页码:6 |
| 关键词 | Type-ii 'w' quantum well Burt-foreman hamiltonian Finite element methods |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/20/3/030507 |
| 通讯作者 | Wang qing(wangqing@mail.semi.ac.cn) |
| 英文摘要 | In this paper, we present an investigation of type-ii 'w' quantum wells for the inas/ga(1-x)in(x)sb/alsb family, where 'w' denotes the conduction profile of the material. we focus our attention on using the eight-band k center dot p model to calculate the band structures within the framework of finite element method. for the sake of clarity, the simulation in this paper is simplified and based on only one period -alsb/inas/ga(1-x)in(x)sb/inas/aisb. the obtained numerical results include the energy levels and wavefunctions of carriers. we discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either in as or ga(1-x)in(x)sb layer and the alloy composition in ga(1-x)in(x)sb separately. in the last part, in order to compare the eight-band k center dot p model, we recalculate the conduction bands of the 'w' structure using the one-band k center dot p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. the in-plane energy dispersions, which illustrate the suppression of the auger recombination process, are also obtained. |
| WOS关键词 | LASERS ; ALLOYS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000289939700014 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428427 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang Qing |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Nanooptoelect Lab, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yu Xiu,Gu Yong-Xian,Wang Qing,et al. Electronic band structure of a type-ii 'w' quantum well calculated by an eight-band k center dot p model[J]. Chinese physics b,2011,20(3):6. |
| APA | Yu Xiu,Gu Yong-Xian,Wang Qing,Wei Xin,&Chen Liang-Hui.(2011).Electronic band structure of a type-ii 'w' quantum well calculated by an eight-band k center dot p model.Chinese physics b,20(3),6. |
| MLA | Yu Xiu,et al."Electronic band structure of a type-ii 'w' quantum well calculated by an eight-band k center dot p model".Chinese physics b 20.3(2011):6. |
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来源：半导体研究所
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