Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition
文献类型：期刊论文
| 作者 | Liang Jiran1,2; Hu Ming1; Kan Qiang2; Liang Xiuqin3; Wang Xiaodong3; Li Guike4; Chen Hongda2 |
| 刊名 | Rare metals
 |
| 出版日期 | 2011-06-01 |
| 卷号 | 30期号:3页码:247-251 |
| 关键词 | Vanadium dioxide Infrared transition Diffraction effect Dual ion beam sputtering Annealing |
| ISSN号 | 1001-0521 |
| DOI | 10.1007/s12598-011-0376-4 |
| 通讯作者 | Liang jiran(liang_jiran@tju.edu.cn) |
| 英文摘要 | Vanadium dioxide thin films were fabricated through annealing vanadium oxide thin films deposited by dual ion beam sputtering. x-ray diffraction (xrd), atom force microscopy (afm), and fourier transform infrared spectrum (ftir) were employed to measure the crystalline structure, surface morphology, and infrared optical transmittance. the phase transition properties were characterized by transmittance. the results show that the annealed vanadium oxide thin film is composed of monoclinic vo(2), with preferred orientation of (011). the maximum of transmittance change is beyond 65% as the temperature increases from 20 to 80a degrees c. the reversible changes in optical transmittance against temperature were observed. the change rate of transmittance at short wavelength is higher than that at long wavelength at the same temperature across semiconductor-metal phase transition. this phenomenon was discussed using diffraction effect. |
| WOS研究方向 | Materials Science ; Metallurgy & Metallurgical Engineering |
| WOS类目 | Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering |
| 语种 | 英语 |
| WOS记录号 | WOS:000291059800007 |
| 出版者 | NONFERROUS METALS SOC CHINA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428442 |
| 专题 | 半导体研究所 |
| 通讯作者 | Liang Jiran |
| 作者单位 | 1.Tianjin Univ, Sch Elect & Informat Technol, Tianjin 300072, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Inst Semicond, State Key Lab Super Lattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liang Jiran,Hu Ming,Kan Qiang,et al. Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition[J]. Rare metals,2011,30(3):247-251. |
| APA | Liang Jiran.,Hu Ming.,Kan Qiang.,Liang Xiuqin.,Wang Xiaodong.,...&Chen Hongda.(2011).Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition.Rare metals,30(3),247-251. |
| MLA | Liang Jiran,et al."Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition".Rare metals 30.3(2011):247-251. |
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来源：半导体研究所
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