Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws
文献类型：期刊论文
| 作者 | Li, GH; Goni, AR; Syassen, K; Hou, HQ; Feng, W; Zhou, JM |
| 刊名 | Physica status solidi b-basic solid state physics
 |
| 出版日期 | 1996-11-01 |
| 卷号 | 198期号:1页码:329-335 |
| ISSN号 | 0370-1972 |
| 英文摘要 | We have measured low-temperature photoluminescence (pl) and optical absorption spectra of an in0.2ga0.8as/gaas multiple quantum well (mqw) structure at pressures up to 8 gpa. below 4.9 gpa, pl shows only the emission of the n = 1 heavy-hole (hh) exciton. three new x-related pl bands appear at higher pressures. they are assigned to spatially indirect (type-ii) and direct (type-i) transitions from x(z) states in gaas and x(xy) valleys of ingaas, respectively, to the hh subband of the wells. from the pl data we obtain a valence band offset of 80 mev for the strained in0.2ga0.8as/gaas mqw system. absorption spectra show three features corresponding to direct exciton transitions in the quantum wells. in the pressure range of 4.5 to 5.5 gpa an additional pronounced feature is apparent in absorption, which is attributed to the pseudo-direct transition between a hh subband and the folded x(z) states of the wells. this gives the first clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance at the heterointerfaces in mqws. |
| WOS关键词 | MULTIPLE QUANTUM-WELLS ; HYDROSTATIC-PRESSURE ; DEFORMATION POTENTIALS ; EXCITON ABSORPTION ; PHOTOLUMINESCENCE ; SPECTROSCOPY ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:A1996VX57300042 |
| 出版者 | WILEY-V C H VERLAG GMBH |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428494 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.MAX PLANCK INST FESTKORPERFORSCH, D-70569 STUTTGART, GERMANY 2.CHINESE ACAD SCI, INST SEMICOND, BEIJING 100083, PEOPLES R CHINA |
| 推荐引用方式 GB/T 7714 | Li, GH,Goni, AR,Syassen, K,et al. Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws[J]. Physica status solidi b-basic solid state physics,1996,198(1):329-335. |
| APA | Li, GH,Goni, AR,Syassen, K,Hou, HQ,Feng, W,&Zhou, JM.(1996).Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws.Physica status solidi b-basic solid state physics,198(1),329-335. |
| MLA | Li, GH,et al."Pressure dependence of the electronic subband structure of strained in0.2ga0.8as/gaas mqws".Physica status solidi b-basic solid state physics 198.1(1996):329-335. |
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来源：半导体研究所
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