Heteroepitaxy of cubic gan: influence of interface structure
文献类型：期刊论文
| 作者 | Trampert, A; Brandt, O; Yang, H; Yang, B; Ploog, KH |
| 刊名 | Microscopy of semiconducting materials 1997
 |
| 出版日期 | 1997 |
| 期号 | 157页码:205-208 |
| ISSN号 | 0951-3248 |
| 通讯作者 | Trampert, a() |
| 英文摘要 | We report on the epitaxial growth and the microstructure of cubic gan. the layers are deposited by plasma-assisted molecular beam epitaxy on gaas and si substrates. despite the extreme lattice mismatch between these materials, gan grows in the metastable cubic phase with a well-defined orientation-relationship to the gaas substrate including a sharp heteroboundary. the preference of the metastable phase and its epitaxial orientation originates in the interface structure which is found to be governed by a coincidence site lattice. |
| WOS关键词 | MOLECULAR-BEAM EPITAXY ; GAN/GAAS(001) ; GROWTH |
| WOS研究方向 | Microscopy ; Physics |
| WOS类目 | Microscopy ; Physics, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000071954600038 |
| 出版者 | IOP PUBLISHING LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428513 |
| 专题 | 半导体研究所 |
| 通讯作者 | Trampert, A |
| 作者单位 | 1.Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Trampert, A,Brandt, O,Yang, H,et al. Heteroepitaxy of cubic gan: influence of interface structure[J]. Microscopy of semiconducting materials 1997,1997(157):205-208. |
| APA | Trampert, A,Brandt, O,Yang, H,Yang, B,&Ploog, KH.(1997).Heteroepitaxy of cubic gan: influence of interface structure.Microscopy of semiconducting materials 1997(157),205-208. |
| MLA | Trampert, A,et al."Heteroepitaxy of cubic gan: influence of interface structure".Microscopy of semiconducting materials 1997 .157(1997):205-208. |
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来源：半导体研究所
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