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Chinese Academy of Sciences Institutional Repositories Grid
Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials

文献类型:期刊论文

作者Zou, LF; Acosta-Ortiz, SE; Zou, LX; Regalado, LE; Sun, DZ; Wang, ZG
刊名Revista mexicana de fisica
出版日期1998-12-01
卷号44页码:93-96
关键词Gas source molecular beam epitaxy Thermal stability Si1-xgex
ISSN号0035-001X
通讯作者Zou, lf(lfzou@ags.ciateq.mx)
英文摘要Gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers.
WOS关键词STRAIN RELAXATION ; HETEROSTRUCTURES
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
WOS记录号WOS:000077675900025
出版者SOCIEDAD MEXICANA DE FISICA
URI标识http://www.irgrid.ac.cn/handle/1471x/2428529
专题半导体研究所
通讯作者Zou, LF
作者单位1.Ctr Invest Opt AC, Unidad Aguascalientes, Aguascalientes 20000, Ags, Mexico
2.Zhongnan Univ Natl Wuhan, Dept Comp Sci, Wuhan 430074, Peoples R China
3.Ctr Invest Opt, Leon 37000, Gto, Mexico
4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Zou, LF,Acosta-Ortiz, SE,Zou, LX,et al. Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials[J]. Revista mexicana de fisica,1998,44:93-96.
APA Zou, LF,Acosta-Ortiz, SE,Zou, LX,Regalado, LE,Sun, DZ,&Wang, ZG.(1998).Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials.Revista mexicana de fisica,44,93-96.
MLA Zou, LF,et al."Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials".Revista mexicana de fisica 44(1998):93-96.

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来源:半导体研究所

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