Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials
文献类型:期刊论文
作者 | Zou, LF; Acosta-Ortiz, SE; Zou, LX; Regalado, LE; Sun, DZ; Wang, ZG |
刊名 | Revista mexicana de fisica
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出版日期 | 1998-12-01 |
卷号 | 44页码:93-96 |
关键词 | Gas source molecular beam epitaxy Thermal stability Si1-xgex |
ISSN号 | 0035-001X |
通讯作者 | Zou, lf(lfzou@ags.ciateq.mx) |
英文摘要 | Gas source molecular beam epitaxy has been used to grow si1-xgex alloys and si1-xgex/si multi-quantum wells (mqws) on (100) si substrates with si2h6 and geh4 as sources. heterostructures and mqws with mirror-like surface morphology, good crystalline qualify, and abrupt interfaces have been studied by a variety of in situ and ex situ techniques. the structural stability and strain relaxation in si1-xgex/si heterostructures have been investigated, and compared to that in the as ion-implanted si1-xgex epilayers. the results show that the strain relaxation mechanism of the non-implanted si1-xgex epilayers is different from that of the as ion-implanted si1-xgex epilayers. |
WOS关键词 | STRAIN RELAXATION ; HETEROSTRUCTURES |
WOS研究方向 | Physics |
WOS类目 | Physics, Multidisciplinary |
语种 | 英语 |
WOS记录号 | WOS:000077675900025 |
出版者 | SOCIEDAD MEXICANA DE FISICA |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428529 |
专题 | 半导体研究所 |
通讯作者 | Zou, LF |
作者单位 | 1.Ctr Invest Opt AC, Unidad Aguascalientes, Aguascalientes 20000, Ags, Mexico 2.Zhongnan Univ Natl Wuhan, Dept Comp Sci, Wuhan 430074, Peoples R China 3.Ctr Invest Opt, Leon 37000, Gto, Mexico 4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Zou, LF,Acosta-Ortiz, SE,Zou, LX,et al. Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials[J]. Revista mexicana de fisica,1998,44:93-96. |
APA | Zou, LF,Acosta-Ortiz, SE,Zou, LX,Regalado, LE,Sun, DZ,&Wang, ZG.(1998).Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials.Revista mexicana de fisica,44,93-96. |
MLA | Zou, LF,et al."Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials".Revista mexicana de fisica 44(1998):93-96. |
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来源:半导体研究所
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