Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer
文献类型：期刊论文
| 作者 | Wang, LS; Liu, XL; Zan, YD; Wang, J; Wang, D; Lu, DC; Wang, ZG |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1998-01-05 |
| 卷号 | 72期号:1页码:109-111 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, ls() |
| 英文摘要 | Wurtzite gan films have been grown on (001) si substrates using gamma-al2o3 as an intermediate layer by low pressure (similar to 76 torr) metalorganic chemical vapor deposition. reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-al2o3 layer of "compliant" character was an effective intermediate layer for the gan film grown epitaxially on si. the narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m gan sample was 54 arcmin. the orientation relationship of gan/gamma-al2o3/si was (0001) gan parallel to(001) gamma-al2o3 parallel to(001) si, [11-20] gan parallel to[110] gamma-al2o3 parallel to[110] si. the photoluminescence measurement for gan at room temperature exhibited a near band-edge peak of 365 nm (3.4 ev). (c) 1998 american institute of physics. |
| WOS关键词 | SINGLE CRYSTALLINE GAN ; LIGHT-EMITTING-DIODES ; VAPOR-PHASE EPITAXY ; THIN-FILMS ; GALLIUM NITRIDE ; 001 SILICON ; SAPPHIRE ; SI ; DEPOSITION ; ALN |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000071324400038 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428543 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, LS |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, LS,Liu, XL,Zan, YD,et al. Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer[J]. Applied physics letters,1998,72(1):109-111. |
| APA | Wang, LS.,Liu, XL.,Zan, YD.,Wang, J.,Wang, D.,...&Wang, ZG.(1998).Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer.Applied physics letters,72(1),109-111. |
| MLA | Wang, LS,et al."Wurtzite gan epitaxial growth on a si(001) substrate using gamma-al2o3 as an intermediate layer".Applied physics letters 72.1(1998):109-111. |
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来源：半导体研究所
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