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Normal-incidence intersubband (in, ga)as/gaas quantum dot infrared photodetectors

文献类型:期刊论文

作者Pan, D; Towe, E; Kennerly, S
刊名Applied physics letters
出版日期1998-10-05
卷号73期号:14页码:1937-1939
ISSN号0003-6951
通讯作者Pan, d()
英文摘要We report the device performance of normal-incidence (in, ga)as/gaas quantum dot intersubband infrared photodetectors. a primary intersubband transition peak is observed at the wavelength of 13 mu m (e-0 --> e-1) and a secondary peak at 11 mu m (e-0 --> e-2). the measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. a peak detectivity of 1 x 10(10) cm hz(1/2)/w at 13 mu m was achieved at 40 k for these devices. (c) 1998 american institute of physics. [s0003-6951(98)01440-5].
WOS关键词ABSORPTION
WOS研究方向Physics
WOS类目Physics, Applied
语种英语
WOS记录号WOS:000076183300005
出版者AMER INST PHYSICS
URI标识http://www.irgrid.ac.cn/handle/1471x/2428568
专题半导体研究所
通讯作者Pan, D
作者单位1.Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA
2.USA, Res Lab, Adelphi, MD 20783 USA
3.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Pan, D,Towe, E,Kennerly, S. Normal-incidence intersubband (in, ga)as/gaas quantum dot infrared photodetectors[J]. Applied physics letters,1998,73(14):1937-1939.
APA Pan, D,Towe, E,&Kennerly, S.(1998).Normal-incidence intersubband (in, ga)as/gaas quantum dot infrared photodetectors.Applied physics letters,73(14),1937-1939.
MLA Pan, D,et al."Normal-incidence intersubband (in, ga)as/gaas quantum dot infrared photodetectors".Applied physics letters 73.14(1998):1937-1939.

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来源:半导体研究所

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