Boron diffusion in ge+ premorphized and bf2+ implanted si(001)
文献类型：期刊论文
| 作者 | Zou, LF; Acosta-Ortiz, SE; Zou, LX; Regalado, LE; Sun, DZ; Wang, ZG |
| 刊名 | Revista mexicana de fisica
 |
| 出版日期 | 1998-12-01 |
| 卷号 | 44页码:85-88 |
| 关键词 | Diffusion Implantation Ge ion Bf2 ion |
| ISSN号 | 0035-001X |
| 通讯作者 | Zou, lf() |
| 英文摘要 | The annealing behavior of si implanted with ge and then bf2 has been characterized by double crystal x-ray diffraction (dcxrd) and secondary ion mass spectroscopy (sims). the results show that annealing at 600 degrees c for 60 minutes can only remove a little damage induced by implantation and nearly no redistribution of ge and b atoms has occurred during the annealing. the initial crystallinity of si is fully recovered after annealing at 950 degrees c for 60 minutes and accompanied by ge diffusion. very shallow boron junction depth has been formed. when annealing temperature rises to 1050 degrees c, b diffusion enhances, which leads to a deep diffusion and good distribution of b atoms into the si substrate. the x-ray diffraction (004) rocking curves from the samples annealed at 1050 degrees c for 60 minutes display two sige peaks, which may be related to the b concentration profiles. |
| WOS关键词 | ELECTRICAL-PROPERTIES ; ION-IMPLANTATION ; REGROWTH ; SILICON ; LAYERS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000077675900023 |
| 出版者 | SOCIEDAD MEXICANA DE FISICA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428618 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zou, LF |
| 作者单位 | 1.Ctr Invest Opt AC, Unidad Aguascalientes, Aguascalientes 20000, Ags, Mexico 2.Zhongnan Univ Natl Wuhan, Dept Comp Sci, Hubei 430074, Peoples R China 3.Ctr Invest Opt, Leon 37000, Gto, Mexico 4.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zou, LF,Acosta-Ortiz, SE,Zou, LX,et al. Boron diffusion in ge+ premorphized and bf2+ implanted si(001)[J]. Revista mexicana de fisica,1998,44:85-88. |
| APA | Zou, LF,Acosta-Ortiz, SE,Zou, LX,Regalado, LE,Sun, DZ,&Wang, ZG.(1998).Boron diffusion in ge+ premorphized and bf2+ implanted si(001).Revista mexicana de fisica,44,85-88. |
| MLA | Zou, LF,et al."Boron diffusion in ge+ premorphized and bf2+ implanted si(001)".Revista mexicana de fisica 44(1998):85-88. |
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来源：半导体研究所
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