Self-organization of the ingaas gaas quantum dots superlattice
文献类型：期刊论文
| 作者 | Zhuang, QD; Li, HX; Pan, L; Li, JM; Kong, MY; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 1999-05-01 |
| 卷号 | 201页码:1161-1163 |
| 关键词 | Quantum dots Superlattice Vertical alignment |
| ISSN号 | 0022-0248 |
| 通讯作者 | Zhuang, qd() |
| 英文摘要 | The mechanism of self-organization of quantum dots (qds) during the growth of ingaas/gaas multilayers on gaas (1 0 0) was investigated with cross-sectional transmission electron microscopy (xtem), and double-crystal x-ray diffraction (dcxd). we found that the qds spacing in the first layer can affect the vertical alignment of qds. there seems to exist one critical lateral qd spacing, below which merging of qds with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. once the critical value of qds spacing is reached, the ingaas qds of the first layer are simply reproduced in the upper layers. the x-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the qds superlattice, and multi-quantum wells (qw) formed by the wetting layers around qds. (c) 1999 elsevier science b.v. all rights reserved. |
| WOS关键词 | X-RAY-DIFFRACTION ; ISLANDS ; SURFACES ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000080406000256 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428714 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhuang, QD |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhuang, QD,Li, HX,Pan, L,et al. Self-organization of the ingaas gaas quantum dots superlattice[J]. Journal of crystal growth,1999,201:1161-1163. |
| APA | Zhuang, QD,Li, HX,Pan, L,Li, JM,Kong, MY,&Lin, LY.(1999).Self-organization of the ingaas gaas quantum dots superlattice.Journal of crystal growth,201,1161-1163. |
| MLA | Zhuang, QD,et al."Self-organization of the ingaas gaas quantum dots superlattice".Journal of crystal growth 201(1999):1161-1163. |
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来源：半导体研究所
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