Effect of growth interruption on the optical properties of inas/gaas quantum dots
文献类型：期刊论文
| 作者 | Lu, ZD; Xu, JZ; Zheng, BZ; Xu, ZY; Ge, WK |
| 刊名 | Solid state communications
 |
| 出版日期 | 1999-02-19 |
| 卷号 | 109期号:10页码:649-653 |
| 关键词 | Semiconductors Optical properties Luminescence |
| ISSN号 | 0038-1098 |
| 通讯作者 | Xu, zy() |
| 英文摘要 | The effect of growth interruption (gi) on the optical properties of inas/gaas quantum dots was investigated by cw and time-resolved photoluminescence (pl). it is found that this effect depends very much on the growth conditions, in particular, the growth rate. in the case of low growth rate, we have found that the gi may introduce either red-shift or blue-shift in pl with increase of the interruption lime, depending on the inas thickness. the observed red shift in our 1.7 monolayer (ml) sample is attributed to the evolution of the inas islands during the growth interruption. while the blue-shift in the 3 ml sample is suggested to be mainly caused by the strain effect. in addition, nearly zero shift was observed for the sample with thickness around 2.5 ml, (c) 1999 elsevier science ltd. all rights reserved. |
| WOS关键词 | TIME ; CONFIGURATION ; LUMINESCENCE ; WELLS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000079601100007 |
| 出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428746 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xu, ZY |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong |
| 推荐引用方式 GB/T 7714 | Lu, ZD,Xu, JZ,Zheng, BZ,et al. Effect of growth interruption on the optical properties of inas/gaas quantum dots[J]. Solid state communications,1999,109(10):649-653. |
| APA | Lu, ZD,Xu, JZ,Zheng, BZ,Xu, ZY,&Ge, WK.(1999).Effect of growth interruption on the optical properties of inas/gaas quantum dots.Solid state communications,109(10),649-653. |
| MLA | Lu, ZD,et al."Effect of growth interruption on the optical properties of inas/gaas quantum dots".Solid state communications 109.10(1999):649-653. |
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来源：半导体研究所
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