Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li, HX; Daniels-Race, T; Wang, ZG |
| 刊名 | Applied physics letters
 |
| 出版日期 | 1999-03-08 |
| 卷号 | 74期号:10页码:1388-1390 |
| ISSN号 | 0003-6951 |
| 通讯作者 | Li, hx(hxli@ee.duke.edu) |
| 英文摘要 | Growth mode and strain relaxation of molecular-beam-epitaxy grown inas/inalas/inp (111)a system have been investigated using reflection high-energy electron diffraction, transmission electron microscopy, atomic force microscopy, and photoluminescence measurements. in direct contrast to the well-studied inas/gaas system, our experimental results show that the inas grown on inalas/inp (111)a follows the stranski-krastanov mode. both self-organized inas quantum dots and relaxed inas islands are formed depending on the inas coverage. intense luminescence signals from both the inas quantum dots and wetting layer are observed. the luminescence efficiency of (111)a samples is comparable to that of (001) samples, suggesting the feasibility of fabricating quantum dot optoelectronic devices on inp (111)a surfaces. (c) 1999 american institute of physics. [s0003-6951(99)01010-4]. |
| WOS关键词 | MICROSTRUCTURAL EVOLUTION ; ISLAND FORMATION ; INXGA1-XAS ; SI(100) ; GAAS ; GE |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000079011500012 |
| 出版者 | AMER INST PHYSICS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428753 |
| 专题 | 半导体研究所 |
| 通讯作者 | Li, HX |
| 作者单位 | 1.Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, HX,Daniels-Race, T,Wang, ZG. Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy[J]. Applied physics letters,1999,74(10):1388-1390. |
| APA | Li, HX,Daniels-Race, T,&Wang, ZG.(1999).Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy.Applied physics letters,74(10),1388-1390. |
| MLA | Li, HX,et al."Growth mode and strain relaxation of inas on inp (111)a grown by molecular beam epitaxy".Applied physics letters 74.10(1999):1388-1390. |
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来源：半导体研究所
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