Studies of high dc current induced degradation in iii-v nitride based heterojunctions
文献类型：期刊论文
| 作者 | Ho, WY; Surya, C; Tong, KY; Lu, LW; Ge, WK |
| 刊名 | Ieee transactions on electron devices
 |
| 出版日期 | 2000-07-01 |
| 卷号 | 47期号:7页码:1421-1425 |
| 关键词 | Current stressing Dlts Flicker noise Heterojunctions Iii-v nitride |
| ISSN号 | 0018-9383 |
| 通讯作者 | Ho, wy() |
| 英文摘要 | We report experiments on high de current stressing in commercial iii-v nitride based heterojunction light-emitting diodes. stressing currents ranging from 100 ma to 200 ma were used. degradations in the device properties were investigated through detailed studies of the current-voltage (i-v) characteristics, electroluminescence, deep-level transient fourier spectroscopy and flicker noise. our experimental data demonstrated significant distortions in the i-v characteristics subsequent to electrical stressing. the room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. concentration of the deep-levels was examined by deep-level transient fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at e-1 = e-c - 1.1 ev. the result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. these traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including dlts. the two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing. |
| WOS关键词 | LOW-FREQUENCY FLUCTUATIONS ; RESONANT-TUNNELING DIODES ; FLICKER NOISE ; GALLIUM NITRIDE ; 1/F NOISE ; DEVICES ; TRANSISTORS ; QUALITY |
| WOS研究方向 | Engineering ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000087898500019 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428792 |
| 专题 | 半导体研究所 |
| 通讯作者 | Ho, WY |
| 作者单位 | 1.Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 3.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ho, WY,Surya, C,Tong, KY,et al. Studies of high dc current induced degradation in iii-v nitride based heterojunctions[J]. Ieee transactions on electron devices,2000,47(7):1421-1425. |
| APA | Ho, WY,Surya, C,Tong, KY,Lu, LW,&Ge, WK.(2000).Studies of high dc current induced degradation in iii-v nitride based heterojunctions.Ieee transactions on electron devices,47(7),1421-1425. |
| MLA | Ho, WY,et al."Studies of high dc current induced degradation in iii-v nitride based heterojunctions".Ieee transactions on electron devices 47.7(2000):1421-1425. |
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来源：半导体研究所
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