中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Studies of high dc current induced degradation in iii-v nitride based heterojunctions

文献类型:期刊论文

作者Ho, WY; Surya, C; Tong, KY; Lu, LW; Ge, WK
刊名Ieee transactions on electron devices
出版日期2000-07-01
卷号47期号:7页码:1421-1425
关键词Current stressing Dlts Flicker noise Heterojunctions Iii-v nitride
ISSN号0018-9383
通讯作者Ho, wy()
英文摘要We report experiments on high de current stressing in commercial iii-v nitride based heterojunction light-emitting diodes. stressing currents ranging from 100 ma to 200 ma were used. degradations in the device properties were investigated through detailed studies of the current-voltage (i-v) characteristics, electroluminescence, deep-level transient fourier spectroscopy and flicker noise. our experimental data demonstrated significant distortions in the i-v characteristics subsequent to electrical stressing. the room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. concentration of the deep-levels was examined by deep-level transient fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at e-1 = e-c - 1.1 ev. the result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. these traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including dlts. the two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.
WOS关键词LOW-FREQUENCY FLUCTUATIONS ; RESONANT-TUNNELING DIODES ; FLICKER NOISE ; GALLIUM NITRIDE ; 1/F NOISE ; DEVICES ; TRANSISTORS ; QUALITY
WOS研究方向Engineering ; Physics
WOS类目Engineering, Electrical & Electronic ; Physics, Applied
语种英语
WOS记录号WOS:000087898500019
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
URI标识http://www.irgrid.ac.cn/handle/1471x/2428792
专题半导体研究所
通讯作者Ho, WY
作者单位1.Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
3.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
推荐引用方式
GB/T 7714
Ho, WY,Surya, C,Tong, KY,et al. Studies of high dc current induced degradation in iii-v nitride based heterojunctions[J]. Ieee transactions on electron devices,2000,47(7):1421-1425.
APA Ho, WY,Surya, C,Tong, KY,Lu, LW,&Ge, WK.(2000).Studies of high dc current induced degradation in iii-v nitride based heterojunctions.Ieee transactions on electron devices,47(7),1421-1425.
MLA Ho, WY,et al."Studies of high dc current induced degradation in iii-v nitride based heterojunctions".Ieee transactions on electron devices 47.7(2000):1421-1425.

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来源:半导体研究所

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