Energy band and acceptor binding energy of gan and alxga1-xn
文献类型：期刊论文
| 作者 | Xia, JB; Cheah, KW; Wang, XL; Sun, DZ; Kong, MY |
| 刊名 | Materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2000-06-01 |
| 卷号 | 75期号:2-3页码:204-206 |
| 关键词 | Acceptor binding energy Hole effective-mass hamiltonian Wurtzite gan |
| ISSN号 | 0921-5107 |
| 通讯作者 | Xia, jb() |
| 英文摘要 | The hole effective-mass hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of gan and alxga1-xn are given. besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. the binding energies of acceptor states are calculated by solving strictly the effective-mass equations. the binding energies of donor and acceptor for wurtzite gan are 20 and 131, 97 mev, respectively, which are inconsistent with the recent experimental results. it is proposed that there are two kinds of acceptors in wurtzite gan. one kind is the general acceptor such as c, substituting n, which satisfies the effective-mass theory, and the other includes mg, zn, cd etc., the binding energy of which deviates from that given by the effective-mass theory. experimentally, wurtzite gan was grown by the mbe method, and the pl spectra were measured. three main peaks are assigned to the da transitions from the two kinds of acceptor. some of the transitions were identified as coming from the cubic phase of gan, which appears randomly within the predominantly hexagonal material. the binding energy of acceptor in aln is about 239, 158 mev, that in alxga1-xn alloys (x approximate to 0.2) is 147, 111 mev, close to that in gan. (c) 2000 published by elsevier science s.a. all rights reserved. |
| WOS研究方向 | Materials Science ; Physics |
| WOS类目 | Materials Science, Multidisciplinary ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000087378500025 |
| 出版者 | ELSEVIER SCIENCE SA |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428831 |
| 专题 | 半导体研究所 |
| 通讯作者 | Xia, JB |
| 作者单位 | 1.Hong Kong Bapitst Univ, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xia, JB,Cheah, KW,Wang, XL,et al. Energy band and acceptor binding energy of gan and alxga1-xn[J]. Materials science and engineering b-solid state materials for advanced technology,2000,75(2-3):204-206. |
| APA | Xia, JB,Cheah, KW,Wang, XL,Sun, DZ,&Kong, MY.(2000).Energy band and acceptor binding energy of gan and alxga1-xn.Materials science and engineering b-solid state materials for advanced technology,75(2-3),204-206. |
| MLA | Xia, JB,et al."Energy band and acceptor binding energy of gan and alxga1-xn".Materials science and engineering b-solid state materials for advanced technology 75.2-3(2000):204-206. |
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来源：半导体研究所
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