Electronic characteristics of inas self-assembled quantum dots
文献类型：期刊论文
| 作者 | Wang, HL; Feng, SL; Zhu, HJ; Ning, D; Chen, F |
| 刊名 | Physica e
 |
| 出版日期 | 2000-05-01 |
| 卷号 | 7期号:3-4页码:383-387 |
| 关键词 | Inas/gaas quantum dots Self-assembled structure Dlts Pl Band offset |
| ISSN号 | 1386-9477 |
| 通讯作者 | Wang, hl() |
| 英文摘要 | Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved. |
| WOS关键词 | ENERGY-LEVELS ; CARRIER RELAXATION ; SPECTROSCOPY |
| WOS研究方向 | Science & Technology - Other Topics ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000087358100018 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428933 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, HL |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, HL,Feng, SL,Zhu, HJ,et al. Electronic characteristics of inas self-assembled quantum dots[J]. Physica e,2000,7(3-4):383-387. |
| APA | Wang, HL,Feng, SL,Zhu, HJ,Ning, D,&Chen, F.(2000).Electronic characteristics of inas self-assembled quantum dots.Physica e,7(3-4),383-387. |
| MLA | Wang, HL,et al."Electronic characteristics of inas self-assembled quantum dots".Physica e 7.3-4(2000):383-387. |
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来源：半导体研究所
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