The effects of pre-irradiation on the formation of si1-xcx alloys
文献类型：期刊论文
| 作者 | Wang, YS; Li, JM; Wang, YB; Wang, YT; Sun, GS; Lin, LY |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2001-07-01 |
| 卷号 | 50期号:7页码:1329-1333 |
| 关键词 | Ion implantation Solid phase epitaxy Si1-xcx alloy |
| ISSN号 | 1000-3290 |
| 通讯作者 | Wang, ys() |
| 英文摘要 | Carbon ions were implanted into crystal si to a concentration of (0.6-1.5)at% at room temperature. some samples were pre-irradiated with s-29(i)+ ions, while others were not pre-irradiated. then the two kinds of samples were implanted with c-12(+) ions simultaneously, and si1-xcx alloys were grown by solid phase epitaxy with high-temperature annealing. the effects of preirradiation on the formation of si1-xcx alloys were studied. if the dose of implanted c ion was less than that for amorphizing si crystals, the implanted c atoms would like to combine with defects produced during implantation, and then it was difficult for si1-xcx alloys to form after annealine, at 950 degreesc. pre-irradiation was advantageous for si1-xcx alloy formation. with the increase of c ion dose, the damage produced by c ions increased. pre-irradiation was unfavorable for si1-xcx, alloy formation. if the implanted c concentration was higher than that for solid phase epitaxy solution, only part of the implanted c atoms form si1-xcx alloys and the effects of pre-irradiation could be neglected. as the annealing temperature was increased to 1050 degreesc, si1-xcx alloys in both pre-irradiated and unpreirradiated samples of low c concentration remained, whereas most part of si1-xcx alloys in samples with high c concentration vanished. |
| WOS关键词 | SI ; IMPLANTATION ; CARBON |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000169720600026 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2428983 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, YS |
| 作者单位 | 1.Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, YS,Li, JM,Wang, YB,et al. The effects of pre-irradiation on the formation of si1-xcx alloys[J]. Acta physica sinica,2001,50(7):1329-1333. |
| APA | Wang, YS,Li, JM,Wang, YB,Wang, YT,Sun, GS,&Lin, LY.(2001).The effects of pre-irradiation on the formation of si1-xcx alloys.Acta physica sinica,50(7),1329-1333. |
| MLA | Wang, YS,et al."The effects of pre-irradiation on the formation of si1-xcx alloys".Acta physica sinica 50.7(2001):1329-1333. |
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来源：半导体研究所
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