Angular dependent characteristics of a 1.3-mu m gainnas/gaas quantum-well resonant cavity enhanced photodetect
文献类型：期刊论文
| 作者 | Zhang, RK; Zhong, Y; Zhang, W; Xu, YQ; Du, Y; Huang, YQ; Ren, XM; Niu, ZC; Wu, RH |
| 刊名 | Microwave and optical technology letters
 |
| 出版日期 | 2002-09-05 |
| 卷号 | 34期号:5页码:333-336 |
| 关键词 | Gainnas quantum wells Resonant cavity enhanced photodetector Wdm networks |
| ISSN号 | 0895-2477 |
| DOI | 10.1002/mop.10454 |
| 通讯作者 | Zhang, rk() |
| 英文摘要 | Characteristics of a 1.3-mum gainnas rce pd with respect to the incident light angle were analyzed both in theoretical simulation and experiments. the results show the influence can be neglected when the light incidence angle is less than 3degrees. this is a requirement for the pd to be applied in wdm networks. (c) 2002 wiley periodicals, inc. |
| WOS研究方向 | Engineering ; Optics |
| WOS类目 | Engineering, Electrical & Electronic ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000177236400005 |
| 出版者 | JOHN WILEY & SONS INC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429141 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, RK |
| 作者单位 | 1.Beijing Univ Post & Telecom, Beijing 100876, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, RK,Zhong, Y,Zhang, W,et al. Angular dependent characteristics of a 1.3-mu m gainnas/gaas quantum-well resonant cavity enhanced photodetect[J]. Microwave and optical technology letters,2002,34(5):333-336. |
| APA | Zhang, RK.,Zhong, Y.,Zhang, W.,Xu, YQ.,Du, Y.,...&Wu, RH.(2002).Angular dependent characteristics of a 1.3-mu m gainnas/gaas quantum-well resonant cavity enhanced photodetect.Microwave and optical technology letters,34(5),333-336. |
| MLA | Zhang, RK,et al."Angular dependent characteristics of a 1.3-mu m gainnas/gaas quantum-well resonant cavity enhanced photodetect".Microwave and optical technology letters 34.5(2002):333-336. |
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来源：半导体研究所
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