Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates
文献类型：期刊论文
| 作者 | Shen, XM; Fu, Y; Feng, G; Zhang, BS; Feng, ZH; Wang, YT; Yang, H |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-12-01 |
| 卷号 | 246期号:1-2页码:69-72 |
| 关键词 | Transmission electron microscopy X-ray diffraction Epitaxial lateral overgrowth Metalorganic vapor phase epitaxy Cubic gallium nitride |
| ISSN号 | 0022-0248 |
| 通讯作者 | Shen, xm() |
| 英文摘要 | Epitaxial lateral overgrown (elo) cubic gan (c-gan) on sio2 patterned gan/gaas(0 0 1) substrates by metalorganic vapor phase epitaxy was investigated using transmission electron microscopy and x-ray diffraction (xrd) measurements. the density of stacking faults (sfs) in elo c-gan was similar to6 x 10(8) cm(-2), while that in underlying gan template was similar to5 x 10(9) cm(-2). xrd measurements showed that the full-width at half-maximum of c-gan (0 0 2) rocking curve decreased from 33 to 17.8 arcmin, indicating the improved crystalline quality of elo c-gan. the mechanism of sf reduction in elo c-gan was also discussed. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | CHEMICAL-VAPOR-DEPOSITION ; CUBIC GAN ; PHASE EPITAXY ; REDUCTION ; GROWTH |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000179179600010 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429147 |
| 专题 | 半导体研究所 |
| 通讯作者 | Shen, XM |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Shen, XM,Fu, Y,Feng, G,et al. Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates[J]. Journal of crystal growth,2002,246(1-2):69-72. |
| APA | Shen, XM.,Fu, Y.,Feng, G.,Zhang, BS.,Feng, ZH.,...&Yang, H.(2002).Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates.Journal of crystal growth,246(1-2),69-72. |
| MLA | Shen, XM,et al."Structural characterization of epitaxial lateral overgrown gan on patterned gan/gaas(001) substrates".Journal of crystal growth 246.1-2(2002):69-72. |
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来源：半导体研究所
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