Structural properties and raman measurement of aln films grown on si (111) by nh3-gsmbe
文献类型：期刊论文
| 作者 | Luo, MC; Wang, XL; Li, JM; Liu, HX; Wang, L; Sun, DZ; Zeng, YP; Lin, LY |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2002-10-01 |
| 卷号 | 244期号:3-4页码:229-235 |
| 关键词 | Atomic force microscopy Raman Transmission electron microscopy Molecular beam epitaxy Aluminium nitride |
| ISSN号 | 0022-0248 |
| 通讯作者 | Luo, mc() |
| 英文摘要 | Epitaxial growth of aln has been performed by molecular beam epitaxy (mbe) with ammonia. the structural properties of materials were studied by cross-sectional transmission electron microscopy (tem), x-ray diffraction (xrd), and atomic force microscopy (afm). xrd and tem diffraction pattern confirm the aln is single crystalline 2h-polytype with the epitaxial relationship of (0001)alnparallel to(111)si, [11 (2) over bar0](aln)parallel to[110](si), [10 (1) over bar0](aln)parallel to[11 (2) over bar](si). micro-raman scattering measurement shows that the e-2 (high) and a(1) (lo) phonon mode shift 9 cm(-1) toward the low frequency, which shows the existence of large tensile strain in the aln films. furthermore, the appearance of forbidden a, (to) mode and its anomalous shift toward high frequency was found and explained. (c) 2002 elsevier science b.v. all rights reserved. |
| WOS关键词 | ELECTRON-AFFINITY ; GAN ; SI(111) |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000178526200002 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429166 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, MC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, MC,Wang, XL,Li, JM,et al. Structural properties and raman measurement of aln films grown on si (111) by nh3-gsmbe[J]. Journal of crystal growth,2002,244(3-4):229-235. |
| APA | Luo, MC.,Wang, XL.,Li, JM.,Liu, HX.,Wang, L.,...&Lin, LY.(2002).Structural properties and raman measurement of aln films grown on si (111) by nh3-gsmbe.Journal of crystal growth,244(3-4),229-235. |
| MLA | Luo, MC,et al."Structural properties and raman measurement of aln films grown on si (111) by nh3-gsmbe".Journal of crystal growth 244.3-4(2002):229-235. |
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来源：半导体研究所
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