Carrier concentration profiling in magnetic gamnsb/gasb investigated by electrochemistry capacitance-voltage profiler
文献类型：期刊论文
| 作者 | Zhang, XL; Zhang, FQ; Song, SL; Chen, NF; Wang, ZG; Lin, LY |
| 刊名 | Chinese science bulletin
 |
| 出版日期 | 2002-11-01 |
| 卷号 | 47期号:21页码:1780-1782 |
| 关键词 | Electrochemistry c-v Magnetic semiconductor Gamnsb |
| ISSN号 | 1001-6538 |
| 通讯作者 | Zhang, xl() |
| 英文摘要 | Depth profiles of carrier concentrations in gamnsb/gasb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of tiron. the carrier concentration in gamnsb/gasb measured by this method is coincident with the results of hall and x-ray diffraction measurements. it is indicated that most of the mn atoms in gamnsb take the site of ga, play a role of acceptors, and provide shallow acceptor level(s). |
| WOS关键词 | III-V SEMICONDUCTORS ; MAGNETOTRANSPORT PROPERTIES ; TRANSPORT-PROPERTIES ; (IN,MN)AS/(GA,AL)SB ; MAGNETORESISTANCE ; HETEROSTRUCTURES ; (GA,MN)AS ; GAAS |
| WOS研究方向 | Science & Technology - Other Topics |
| WOS类目 | Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000178754200004 |
| 出版者 | SCIENCE CHINA PRESS |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429170 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, XL |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, XL,Zhang, FQ,Song, SL,et al. Carrier concentration profiling in magnetic gamnsb/gasb investigated by electrochemistry capacitance-voltage profiler[J]. Chinese science bulletin,2002,47(21):1780-1782. |
| APA | Zhang, XL,Zhang, FQ,Song, SL,Chen, NF,Wang, ZG,&Lin, LY.(2002).Carrier concentration profiling in magnetic gamnsb/gasb investigated by electrochemistry capacitance-voltage profiler.Chinese science bulletin,47(21),1780-1782. |
| MLA | Zhang, XL,et al."Carrier concentration profiling in magnetic gamnsb/gasb investigated by electrochemistry capacitance-voltage profiler".Chinese science bulletin 47.21(2002):1780-1782. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。