In0.25ga0.75as films growth on the thin gaas/alas buffer layer on the gaas(001) substrate
文献类型：期刊论文
| 作者 | Zhang, ZC; Yang, SY; Zhang, FQ; Xu, B; Zeng, YP; Chen, YH; Wang, ZG |
| 刊名 | Applied surface science
 |
| 出版日期 | 2003-07-15 |
| 卷号 | 217期号:1-4页码:268-274 |
| 关键词 | Strain Dislocation Interfaces Molecular beam epitaxy Semiconductor iii-v materials |
| ISSN号 | 0169-4332 |
| DOI | 10.1016/s0169-4332(03)00555-5 |
| 通讯作者 | Zhang, zc() |
| 英文摘要 | Thin gaas/alas and gaas/gaas buffer layer structure have been fabricated on the gaas(001) substrate. the top gaas buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (alas or gaas), which was mechanically behaved like the compliant substrate. four hundred nanometer in0.25ga0.75as films were grown on these substrates and the traditional substrate directly. photoluminescence (pl), double-crystal x-ray diffraction (dcxrd) and atomic force microscopy (afm) measurements were used to estimate the quality of the in0.25ga0.75as layer and the compliant effects of the low temperature buffer layer. all the measurements shown that the qualities of epilayer have been improved and the substrate have been deteriorated severely. the growth technique of the thin gaas/alas structure was found to be simple but very powerful for heteroepitaxy. (c) 2003 elsevier science b.v all rights reserved. |
| WOS关键词 | CRITICAL THICKNESS ; COMPLIANT SUBSTRATE ; RELAXATION |
| WOS研究方向 | Chemistry ; Materials Science ; Physics |
| WOS类目 | Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter |
| 语种 | 英语 |
| WOS记录号 | WOS:000184069200033 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429259 |
| 专题 | 半导体研究所 |
| 通讯作者 | Zhang, ZC |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, ZC,Yang, SY,Zhang, FQ,et al. In0.25ga0.75as films growth on the thin gaas/alas buffer layer on the gaas(001) substrate[J]. Applied surface science,2003,217(1-4):268-274. |
| APA | Zhang, ZC.,Yang, SY.,Zhang, FQ.,Xu, B.,Zeng, YP.,...&Wang, ZG.(2003).In0.25ga0.75as films growth on the thin gaas/alas buffer layer on the gaas(001) substrate.Applied surface science,217(1-4),268-274. |
| MLA | Zhang, ZC,et al."In0.25ga0.75as films growth on the thin gaas/alas buffer layer on the gaas(001) substrate".Applied surface science 217.1-4(2003):268-274. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。