Study of optical properties in gaas1-xsbx/gaas single quantum wells
文献类型：期刊论文
| 作者 | Luo, XD; Bian, LF; Xu, ZY; Luo, HL; Wang, YQ; Wang, JN; Ge, WK |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-07-01 |
| 卷号 | 52期号:7页码:1761-1765 |
| 关键词 | Gaassb/gaas Selectively-excited Type ii transition |
| ISSN号 | 1000-3290 |
| 通讯作者 | Luo, xd() |
| 英文摘要 | Gaassb/gaas single quantum wells (sqws) grown by molecular beam epitaxy are studied by selectively-excited photoluminescence (sepl) measurement. for the first time, we have simultaneously observed the pl, from both type i and type ii transitions in gaassb/gaas heterostructure in the sepl. the two transitions exhibit different pl, behaviours under different excitation energy. as expected, the peak energy of type i emission remains constant in the whole excitation energy range we used, while type u transition shows a significant blue shift with increasing excitation energy. the observed blue shift is well explained in terms of electron-hole charge separation model at the interface. time-resolved(tr) pl exhibits more type 11 characteristic of gaassb/gaas qw. moreover, the results of the excitation-power-dependent pl and trpl provide more direct information on the type-ii nature of the band alignment in gaassb/gaas quantum-well structures. by combining the experimental results with some simple calculations, we have obtained the strained and unstrained valence band offsets of q(v) = 1.145 and q(v)(0) = 0. 76 in our samples, respectively. |
| WOS关键词 | ROOM-TEMPERATURE ; GAAS ; DOTS ; OPERATION |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000183990700038 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429304 |
| 专题 | 半导体研究所 |
| 通讯作者 | Luo, XD |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Luo, XD,Bian, LF,Xu, ZY,et al. Study of optical properties in gaas1-xsbx/gaas single quantum wells[J]. Acta physica sinica,2003,52(7):1761-1765. |
| APA | Luo, XD.,Bian, LF.,Xu, ZY.,Luo, HL.,Wang, YQ.,...&Ge, WK.(2003).Study of optical properties in gaas1-xsbx/gaas single quantum wells.Acta physica sinica,52(7),1761-1765. |
| MLA | Luo, XD,et al."Study of optical properties in gaas1-xsbx/gaas single quantum wells".Acta physica sinica 52.7(2003):1761-1765. |
入库方式： iSwitch采集
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。