Electron transport properties of mm-hemt with varied channel indium contents
文献类型：期刊论文
| 作者 | Qiu, ZJ; Jiang, CP; Gui, YS; Shu, XZ; Guo, SL; Chu, JH; Cui, LJ; Zeng, YP; Zhu, ZP; Wang, BQ |
| 刊名 | Acta physica sinica
 |
| 出版日期 | 2003-11-01 |
| 卷号 | 52期号:11页码:2879-2882 |
| 关键词 | Mm-hemt Shubnikov-de hass oscillation |
| ISSN号 | 1000-3290 |
| 通讯作者 | Qiu, zj() |
| 英文摘要 | Transport properties of two-dimensional electron gas (2deg) are crucial to metamorphic high-electron-mobility transistors (mm-hemt). we have investigated the variations of subband electron mobility and concentration versus temperature from shubnikov-de hass oscillations., and variable temperature hall measurements. the results indicate that the electrical performance is the best when the in content is 0.65 in the channel for mm-hemt. when the in content exceeds 0.65, a large lattice mismatch will cause dislocations and result in the decrease of mobility and the fall of performance in materials and devices. |
| WOS关键词 | MOBILITY TRANSISTORS ; ALLOY SCATTERING ; HIGH-PERFORMANCE ; GAAS |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000186520100040 |
| 出版者 | CHINESE PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429328 |
| 专题 | 半导体研究所 |
| 通讯作者 | Qiu, ZJ |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Qiu, ZJ,Jiang, CP,Gui, YS,et al. Electron transport properties of mm-hemt with varied channel indium contents[J]. Acta physica sinica,2003,52(11):2879-2882. |
| APA | Qiu, ZJ.,Jiang, CP.,Gui, YS.,Shu, XZ.,Guo, SL.,...&Wang, BQ.(2003).Electron transport properties of mm-hemt with varied channel indium contents.Acta physica sinica,52(11),2879-2882. |
| MLA | Qiu, ZJ,et al."Electron transport properties of mm-hemt with varied channel indium contents".Acta physica sinica 52.11(2003):2879-2882. |
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来源：半导体研究所
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