中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching

文献类型:期刊论文

作者Xia, JS; Yu, JZ; Fan, ZC; Wang, ZT; Chen, SW
刊名Optical engineering
出版日期2004-04-01
卷号43期号:4页码:789-790
关键词Variable optical attenuator Thermo-optics Silicon-on-insulator Multimode interferometers Anisotropic chemical etching
ISSN号0091-3286
DOI10.1117/1.1648652
通讯作者Xia, js(jsxia@red.semi.ac.cn)
英文摘要A thermo-optic mach-zehnder (mz) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (soi) wafer. multimode interferometers were used as power splitters and combiners in the mz structure. in order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. isolating grooves were introduced to reduce power consumption and device length. the device has a low power consumption of 210 mw and a response time of 50 mus. (c) 2004 society of photo-optical instrumentation engineers.
WOS研究方向Optics
WOS类目Optics
语种英语
WOS记录号WOS:000220968500002
出版者SPIE-INT SOCIETY OPTICAL ENGINEERING
URI标识http://www.irgrid.ac.cn/handle/1471x/2429394
专题半导体研究所
通讯作者Xia, JS
作者单位Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
推荐引用方式
GB/T 7714
Xia, JS,Yu, JZ,Fan, ZC,et al. Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching[J]. Optical engineering,2004,43(4):789-790.
APA Xia, JS,Yu, JZ,Fan, ZC,Wang, ZT,&Chen, SW.(2004).Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching.Optical engineering,43(4),789-790.
MLA Xia, JS,et al."Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching".Optical engineering 43.4(2004):789-790.

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来源:半导体研究所

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