Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching
文献类型:期刊论文
作者 | Xia, JS; Yu, JZ; Fan, ZC; Wang, ZT; Chen, SW |
刊名 | Optical engineering
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出版日期 | 2004-04-01 |
卷号 | 43期号:4页码:789-790 |
关键词 | Variable optical attenuator Thermo-optics Silicon-on-insulator Multimode interferometers Anisotropic chemical etching |
ISSN号 | 0091-3286 |
DOI | 10.1117/1.1648652 |
通讯作者 | Xia, js(jsxia@red.semi.ac.cn) |
英文摘要 | A thermo-optic mach-zehnder (mz) variable optical attenuator based on silicon waveguides with a large cross section was designed and fabricated on silicon-on-insulator (soi) wafer. multimode interferometers were used as power splitters and combiners in the mz structure. in order to achieve a smooth interface, anisotropic chemical etching of silicon was used to fabricate the waveguides. isolating grooves were introduced to reduce power consumption and device length. the device has a low power consumption of 210 mw and a response time of 50 mus. (c) 2004 society of photo-optical instrumentation engineers. |
WOS研究方向 | Optics |
WOS类目 | Optics |
语种 | 英语 |
WOS记录号 | WOS:000220968500002 |
出版者 | SPIE-INT SOCIETY OPTICAL ENGINEERING |
URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429394 |
专题 | 半导体研究所 |
通讯作者 | Xia, JS |
作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Xia, JS,Yu, JZ,Fan, ZC,et al. Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching[J]. Optical engineering,2004,43(4):789-790. |
APA | Xia, JS,Yu, JZ,Fan, ZC,Wang, ZT,&Chen, SW.(2004).Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching.Optical engineering,43(4),789-790. |
MLA | Xia, JS,et al."Thermo-optic variable optical attenuator with low power consumption fabricated on silicon-on-insulator by anisotropic chemical etching".Optical engineering 43.4(2004):789-790. |
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来源:半导体研究所
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