Influence of mg content on molecular-beam-epitaxy-grown znmgs ultraviolet photodetectors
文献类型：期刊论文
| 作者 | Lu, LW; Sou, IK; Ge, WK |
| 刊名 | Journal of crystal growth
 |
| 出版日期 | 2004-04-15 |
| 卷号 | 265期号:1-2页码:28-33 |
| 关键词 | Characterization Ultraviolet photodetector Molecular beam epitaxy |
| ISSN号 | 0022-0248 |
| DOI | 10.1016/j.jcrysgro.2004.01.034 |
| 通讯作者 | Lu, lw(lwlu@red.semi.ac.cn) |
| 英文摘要 | Zn1-xmgxs-based schottky barrier ultraviolet (uv) photodetectors were fabricated using the molecular-beam-epitaxy (mbe) technique. the influence of mg content on mbe-grown zn1-xmgxs-based uv photodetectors has been investigated in details with a variety of experimental techniques, including photoresponse (pr), capacitance-voltage, deep level transient fourier spectroscopy (dltfs) and photoluminescence (pl). the room-temperature pr results show that the abrupt long-wavelength cutoffs covering 325, 305 295. and 270 nm with mg contents of 16%, 44%, 57%, and 75% in the zn1-xmgxs active layers, respectively, were achieved. but the responsivity and the external quantum efficiency exhibited a slight decrease with the mg content increasing. in good agreement with the pr results, both of the integrated intensity of the pl spectra obtained from zn1-xmgxs thin films with different mg compositions (x = 31% and 52%, respectively) and the dltfs spectra obtained from zn1-xmgxs-based (x = 5% and 45%, respectively) uv photodetector samples clearly revealed a significant concentration increase of the non-radiative deep traps with increasing mg containing in the znmgs active layers. our experimental results also indicate that the mbe-grown znmgs-based photodetectors can offer the promising characteristics for the detection of short-wavelength uv radiation. (c) 2004 elsevier b.v. all rights reserved. |
| WOS研究方向 | Crystallography ; Materials Science ; Physics |
| WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| WOS记录号 | WOS:000220937000004 |
| 出版者 | ELSEVIER SCIENCE BV |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429412 |
| 专题 | 半导体研究所 |
| 通讯作者 | Lu, LW |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lu, LW,Sou, IK,Ge, WK. Influence of mg content on molecular-beam-epitaxy-grown znmgs ultraviolet photodetectors[J]. Journal of crystal growth,2004,265(1-2):28-33. |
| APA | Lu, LW,Sou, IK,&Ge, WK.(2004).Influence of mg content on molecular-beam-epitaxy-grown znmgs ultraviolet photodetectors.Journal of crystal growth,265(1-2),28-33. |
| MLA | Lu, LW,et al."Influence of mg content on molecular-beam-epitaxy-grown znmgs ultraviolet photodetectors".Journal of crystal growth 265.1-2(2004):28-33. |
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来源：半导体研究所
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