Semiconductor nanometer structures and devices
文献类型：期刊论文
| 作者 | Wang, ZG; Wu, J |
| 刊名 | Journal of the korean physical society
 |
| 出版日期 | 2004-12-01 |
| 卷号 | 45页码:S877-s880 |
| 关键词 | Inas/ingaas Molecular beam epitaxy Nanostructures Quantum dot |
| ISSN号 | 0374-4884 |
| 通讯作者 | Wang, zg(zgwang@red.semi.ac.cn) |
| 英文摘要 | Self-assembled quantum dots and wires were obtained in the inxga1-xas/gaas and inas/in0.52al0.48as/lnp systems, respectively, using molecular beam epitaxy (mbe). uniformity in the distribution, density, and spatial ordering of the nanostructures can be controlled to some extent by adjusting and optimizing the mbe growth parameters. laser devices and superluminescent diodes were fabricated with inas/gaas self-assembled quantum dots as the active region. |
| WOS关键词 | INAS QUANTUM DOTS ; SELF-ORGANIZATION ; MONOLAYER COVERAGE ; DENSITY ; GAAS ; ISLANDS ; SUBSTRATE ; INP(001) ; EPITAXY ; INP |
| WOS研究方向 | Physics |
| WOS类目 | Physics, Multidisciplinary |
| 语种 | 英语 |
| WOS记录号 | WOS:000226119400097 |
| 出版者 | KOREAN PHYSICAL SOC |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429422 |
| 专题 | 半导体研究所 |
| 通讯作者 | Wang, ZG |
| 作者单位 | Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, ZG,Wu, J. Semiconductor nanometer structures and devices[J]. Journal of the korean physical society,2004,45:S877-s880. |
| APA | Wang, ZG,&Wu, J.(2004).Semiconductor nanometer structures and devices.Journal of the korean physical society,45,S877-s880. |
| MLA | Wang, ZG,et al."Semiconductor nanometer structures and devices".Journal of the korean physical society 45(2004):S877-s880. |
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来源：半导体研究所
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