Research progress of self-organized ge quantum dots on si substrate
文献类型：期刊论文
| 作者 | Huang, CJ; Yu, JZ; Wang, QM |
| 刊名 | Progress in natural science
 |
| 出版日期 | 2004-05-01 |
| 卷号 | 14期号:5页码:388-395 |
| 关键词 | Quantum dots Si-based optoelectronics Sige material |
| ISSN号 | 1002-0071 |
| 通讯作者 | Yu, jz() |
| 英文摘要 | A review is presented on recent research development of self-organized ge/si quantum dots (qds). emphasis is put on the morphological evolution of the ge quantum dots grown on si (001) substrate, the structure analysis of multilayer ge qds, the optical and electronic properties of these nanostructures, and the approaches to fabricating ordered ge quantum dots. |
| WOS关键词 | INALAS WETTING LAYER ; MULTILAYER STRUCTURE ; GE/SI(001) ISLANDS ; EVOLUTION ; COLUMNS |
| WOS研究方向 | Materials Science ; Science & Technology - Other Topics |
| WOS类目 | Materials Science, Multidisciplinary ; Multidisciplinary Sciences |
| 语种 | 英语 |
| WOS记录号 | WOS:000221600300002 |
| 出版者 | TAYLOR & FRANCIS LTD |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429442 |
| 专题 | 半导体研究所 |
| 通讯作者 | Yu, JZ |
| 作者单位 | Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China |
| 推荐引用方式 GB/T 7714 | Huang, CJ,Yu, JZ,Wang, QM. Research progress of self-organized ge quantum dots on si substrate[J]. Progress in natural science,2004,14(5):388-395. |
| APA | Huang, CJ,Yu, JZ,&Wang, QM.(2004).Research progress of self-organized ge quantum dots on si substrate.Progress in natural science,14(5),388-395. |
| MLA | Huang, CJ,et al."Research progress of self-organized ge quantum dots on si substrate".Progress in natural science 14.5(2004):388-395. |
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来源：半导体研究所
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