Anomalously large resistance at the charge neutrality point in a zero-gap inas/gasb bilayer
文献类型：期刊论文
| 作者 | Yu,W1; Clericò,V2; Fuentevilla,C Hernández2; Shi,X1; Jiang,Y3; Saha,D4; Lou,W K5; Chang,K5; Huang,D H6; Gumbs,G7 |
| 刊名 | New journal of physics
 |
| 出版日期 | 2018-05-31 |
| 卷号 | 20期号:5 |
| ISSN号 | 1367-2630 |
| 关键词 | Topological insulators Quantum transport Magnetotransport Excitonic insulator |
| DOI | 10.1088/1367-2630/aac595 |
| 英文摘要 | Abstract we report here our recent electron transport results in spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an inas(10 nm)/gasb(5 nm) coupled quantum well. we observe a narrow and intense maximum (～500 kω) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature dependence above t?=?7 k and perfect stability against quantizing magnetic fields. we discuss several mechanisms for that unexpectedly large resistance in this zero-gap semi-metal system including the formation of an excitonic insulator state. |
| 语种 | 英语 |
| 出版者 | IOP Publishing |
| WOS记录号 | IOP:1367-2630-20-5-AAC595 |
| URI标识 | http://www.irgrid.ac.cn/handle/1471x/2429479 |
| 专题 | 半导体研究所 |
| 作者单位 | 1.Sandia National Laboratories, Albuquerque, NM 87185, United States of America 2.NANOLAB, Nanotechnology Group, Universidad de Salamanca, E-37008 Salamanca, Spain 3.School of Physics, Georgia Institute of Technology, Atlanta, GA 30332, United States of America 4.Department of Physics, University of Florida, Gainesville, FL 32611, United States of America 5.SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, People’s Republic of China 6.Air Force Research Laboratory, Space Vehicles Directorate, Kirtland Air Force Base, Albuquerque NM 87117, United States of America 7.Department of Physics and Astronomy, Hunter College of the City University of New York, New York, NY 10065, United States of America 8.National High Magnetic Field Laboratory, Tallahassee, FL 32310, United States of America 9.Department of Physics, University of California at Berkeley, Berkeley, CA 94720, United States of America 10.Department of Physics, University of Pavia, I-27100 Pavia, Italy |
| 推荐引用方式 GB/T 7714 | Yu,W,Clericò,V,Fuentevilla,C Hernández,et al. Anomalously large resistance at the charge neutrality point in a zero-gap inas/gasb bilayer[J]. New journal of physics,2018,20(5). |
| APA | Yu,W.,Clericò,V.,Fuentevilla,C Hernández.,Shi,X.,Jiang,Y.,...&Klem,J F.(2018).Anomalously large resistance at the charge neutrality point in a zero-gap inas/gasb bilayer.New journal of physics,20(5). |
| MLA | Yu,W,et al."Anomalously large resistance at the charge neutrality point in a zero-gap inas/gasb bilayer".New journal of physics 20.5(2018). |
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来源：半导体研究所
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