Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes
文献类型：期刊论文
| 作者 | Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu; Zongshun Liu; Xiang Li; Feng Liang; Wei Liu; Shuangtao Liu |
| 刊名 | IEEE Photonics Journal
 |
| 出版日期 | 2017 |
| 卷号 | 9期号:2页码:2300108 |
| 学科主题 | 光电子学 |
| 公开日期 | 2018-11-30 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/28785]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 推荐引用方式 GB/T 7714 | Jing Yang,Degang Zhao,Desheng Jiang,et al. Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes[J]. IEEE Photonics Journal,2017,9(2):2300108. |
| APA | Jing Yang.,Degang Zhao.,Desheng Jiang.,Ping Chen.,Jianjun Zhu.,...&Mo Li.(2017).Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes.IEEE Photonics Journal,9(2),2300108. |
| MLA | Jing Yang,et al."Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes".IEEE Photonics Journal 9.2(2017):2300108. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。