The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory
文献类型：会议论文
| 作者 | Wang, Yan1,2; Li, Yang1,2; Liu, Qi1,2; Bi, Jinshun1,2; Liu, Jing1,2 ; Sun, Haitao1,2; Lv, Hangbing1,2; Long, Shibing1,2; Xi, Kai3; Liu, Ming1,2
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| 出版日期 | 2016 |
| 关键词 | resistive random access memory (RRAM) heavy ion radiation electrical performance |
| 英文摘要 | In this summary, the resistive random access memory (RRAM) with the structure of Pt/HfO2/Ti is investigated for applications in radiation circumstance. The heavy ion Kr-86(26+) of HIRFL (The Heavy Ion Research Facility in Lanzhou) is used as the radiation source. The energy of Kr-86(26+) is 25 MeV/u, the LET is 37.6 MeV/(cm(2)/mg), and the fluence of 5e11 is achieved after 2 hours radiation. Basic performance of the Pt/HfO2/Ti is compared before and after radiation. An obvious decrease is shown in the original resistance value after radiation, and the forming process is no longer needed. The HRS, LRS, transition voltage and endurance are still stable after radiation. |
| 会议录 | 2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS)
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| 会议录出版者 | IEEE |
| 会议录出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA |
| 语种 | 英语 |
| 资助项目 | Youth Innovation Promotion Association CAS[2015096] |
| WOS研究方向 | Engineering |
| WOS记录号 | WOS:000450759400022 |
| 源URL | [http://119.78.100.186/handle/113462/63971]  |
| 专题 | 中国科学院近代物理研究所 |
| 通讯作者 | Liu, Ming |
| 作者单位 | 1.Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Device Integrat, Beijing 100029, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Yan,Li, Yang,Liu, Qi,et al. The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory[C]. 见:. |
入库方式： OAI收割
来源：近代物理研究所
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