中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 近代物理研究所
  3. 中国科学院近代物理研究所
  4. 材料研究中心
Influence of edge effects on single event upset susceptibility of SOI SRAMs

文献类型：期刊论文

作者Xi, Kai1,3; Liu, Gang2; Hou, Mingdong3; Geng, Chao1,3; Bi, Jinshun2; Zhang, Zhangang1,3; Zhao, Fazhan2; Liu, Jie3; Gu, Song1,3; Liu, Tianqi1,3
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2015-01
卷号342页码:286-291
关键词Single event upset Edge effects Sensitive region CREME-MC simulation
ISSN号0168-583X
DOI10.1016/j.nimb.2014.10.018
英文摘要An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 mu m and 0.18 mu m feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CREME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down. (C) 2014 Elsevier B.V. All rights reserved.
WOS关键词HEAVY-ION ; RATE PREDICTION ; MICROELECTRONICS ; FUTURE ; ANGLES ; BULK
资助项目National Natural Science Foundation of China[11179003] ; National Natural Science Foundation of China[10975164] ; National Natural Science Foundation of China[10805062] ; National Natural Science Foundation of China[11005134]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000347770500044
出版者ELSEVIER SCIENCE BV
源URL[http://119.78.100.186/handle/113462/56571]  
专题近代物理研究所_材料研究中心
通讯作者Liu, Jie
作者单位1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714		 Xi, Kai,Liu, Gang,Hou, Mingdong,et al. Influence of edge effects on single event upset susceptibility of SOI SRAMs[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2015,342:286-291.
APA Xi, Kai.,Liu, Gang.,Hou, Mingdong.,Geng, Chao.,Bi, Jinshun.,...&Liu, Tianqi.(2015).Influence of edge effects on single event upset susceptibility of SOI SRAMs.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,342,286-291.
MLA Xi, Kai,et al."Influence of edge effects on single event upset susceptibility of SOI SRAMs".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 342(2015):286-291.

入库方式： OAI收割

来源：近代物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。