A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs under Repetitive Unclamped Inductive Switching Stresses
文献类型：期刊论文
| 作者 | Su HY(苏洪源) |
| 刊名 | IEEE Transactions on Power Electronics
 |
| 出版日期 | 2017-07-21 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.106/handle/172511/18031]  |
| 专题 | 微电子研究所_硅器件与集成研发中心 |
| 推荐引用方式 GB/T 7714 | Su HY. A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs under Repetitive Unclamped Inductive Switching Stresses[J]. IEEE Transactions on Power Electronics,2017. |
| APA | 苏洪源.(2017).A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs under Repetitive Unclamped Inductive Switching Stresses.IEEE Transactions on Power Electronics. |
| MLA | 苏洪源."A Deep Insight into the Degradation of 1.2kV 4H-SiC MOSFETs under Repetitive Unclamped Inductive Switching Stresses".IEEE Transactions on Power Electronics (2017). |
入库方式： OAI收割
来源：微电子研究所
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