Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation
文献类型：期刊论文
| 作者 | Gao JT(高见头) ; Li DL(李多力); Li BH(李彬鸿); Li B(李博); Zheng ZS(郑中山); Zhu HP(朱慧平); Han ZS(韩郑生); Luo JJ(罗家俊); Liang CP(梁春平); Cui Y(崔岩)
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| 刊名 | Semiconductor Science and Technology
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| 出版日期 | 2018-10-11 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18910]  |
| 专题 | 微电子研究所_硅器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Gao JT,Li DL,Li BH,et al. Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation[J]. Semiconductor Science and Technology,2018. |
| APA | Gao JT.,Li DL.,Li BH.,Li B.,Zheng ZS.,...&Cui Y.(2018).Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation.Semiconductor Science and Technology. |
| MLA | Gao JT,et al."Total dose effect of Al2O3-based metal-oxide-semiconductor structures and its mechanism under gamma-ray irradiation".Semiconductor Science and Technology (2018). |
入库方式： OAI收割
来源：微电子研究所
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