Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2
文献类型：期刊论文
| 作者 | Yuanjie Lv; Xingye zhou; shibing Long; Xubo Song; Yuangang Wang; Shixiong Liang; Zezhao He; Tingting Han; Xin Tan; Zhihong Feng |
| 刊名 | IEEE Electron Device Letters
 |
| 出版日期 | 2018-11-14 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18965]  |
| 专题 | 微电子研究所_微电子器件与集成技术重点实验室 |
| 推荐引用方式 GB/T 7714 | Yuanjie Lv,Xingye zhou,shibing Long,et al. Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2[J]. IEEE Electron Device Letters,2018. |
| APA | Yuanjie Lv.,Xingye zhou.,shibing Long.,Xubo Song.,Yuangang Wang.,...&MingLiu.(2018).Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2.IEEE Electron Device Letters. |
| MLA | Yuanjie Lv,et al."Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2".IEEE Electron Device Letters (2018). |
入库方式： OAI收割
来源：微电子研究所
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