中国科学院机构知识库网格系统: 检索

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	Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 期刊论文 OAI收割 IEEE Electron Device Letters, 2018 作者: Yuanjie Lv; Xingye zhou; shibing Long; Xubo Song; Yuangang Wang \| 收藏 \| 浏览/下载：47/0 \| 提交时间：2019/04/18
	Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 00218979 Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo 收藏 \| 浏览/下载：12/0 \| 提交时间：2013/05/07
	Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 OAI收割 nanoscale research letters, 2012, 卷号: 7, 页码: 434 Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo) 收藏 \| 浏览/下载：15/0 \| 提交时间：2013/04/02
	Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 OAI收割 applied physics letters, 2012, 卷号: 101, 期号: 11, 页码: 113501 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) 收藏 \| 浏览/下载：8/0 \| 提交时间：2013/03/27
	Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors 期刊论文 OAI收割 journal of applied physics, 2012, 卷号: 112, 期号: 5, 页码: 054513 Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo) 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/04/02