Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
文献类型：期刊论文
| 作者 | Shi JY(史敬元) ; Fan J(樊捷); Kang XW(康玄武); Wang XH(王鑫华); Huang S(黄森); Liu XY(刘新宇); Zheng YK(郑英奎); Wei K(魏珂)
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| 刊名 | IEEE Transactions on Electron Devices
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| 出版日期 | 2018 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18976]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Shi JY,Fan J,Kang XW,et al. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices[J]. IEEE Transactions on Electron Devices,2018. |
| APA | Shi JY.,Fan J.,Kang XW.,Wang XH.,Huang S.,...&Wei K.(2018).Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices.IEEE Transactions on Electron Devices. |
| MLA | Shi JY,et al."Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices".IEEE Transactions on Electron Devices (2018). |
入库方式： OAI收割
来源：微电子研究所
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