Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Wang WW(王文武) ; Zheng YK(郑英奎); Jiang HJ(蒋浩杰); Wei K(魏珂); Wang XH(王鑫华); Liu XY(刘新宇); Kang XW(康玄武); Li JF(李俊峰)
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| 刊名 | ACS Applied Materials & Interfaces
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| 出版日期 | 2018-06-01 |
| 文献子类 | 期刊论文 |
| 源URL | [http://159.226.55.107/handle/172511/18979]  |
| 专题 | 微电子研究所_高频高压器件与集成研发中心 |
| 作者单位 | 中国科学院微电子研究所 |
| 推荐引用方式 GB/T 7714 | Wang WW,Zheng YK,Jiang HJ,et al. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition[J]. ACS Applied Materials & Interfaces,2018. |
| APA | Wang WW.,Zheng YK.,Jiang HJ.,Wei K.,Wang XH.,...&Li JF.(2018).Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.ACS Applied Materials & Interfaces. |
| MLA | Wang WW,et al."Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition".ACS Applied Materials & Interfaces (2018). |
入库方式： OAI收割
来源：微电子研究所
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